FJT44KTF
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- Mfr.Part #
- FJT44KTF
- Manufacturer
- onsemi
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS NPN 400V 0.3A SOT223-4
- Stock
- 1,143
- In Stock ：
- 1,143
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Polarity/Channel Type :
- NPN
- Voltage :
- 400V
- RoHS Status :
- ROHS3 Compliant
- Power Dissipation :
- 2W
- Element Configuration :
- Single
- Voltage - Rated DC :
- 400V
- Collector Emitter Breakdown Voltage :
- 400V
- Mounting Type :
- Surface Mount
- Height :
- 1.6mm
- Number of Terminations :
- 4
- Mount :
- Surface Mount
- Transistor Application :
- SWITCHING
- hFE Min :
- 50
- Transistor Element Material :
- SILICON
- Package / Case :
- TO-261-4, TO-261AA
- Vce Saturation (Max) @ Ib, Ic :
- 750mV @ 5mA, 50mA
- Number of Elements :
- 1
- Operating Temperature :
- 150°C TJ
- Length :
- 6.5mm
- JESD-609 Code :
- e3
- Factory Lead Time :
- 4 Weeks
- Base Part Number :
- FJT44
- Max Collector Current :
- 300mA
- Packaging :
- Tape and Reel (TR)
- Current :
- 3A
- Max Breakdown Voltage :
- 400V
- Transistor Type :
- NPN
- Collector Base Voltage (VCBO) :
- 500V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 50 @ 10mA 10V
- Weight :
- 188.014037mg
- Width :
- 3.5mm
- Radiation Hardening :
- No
- Current Rating :
- 300mA
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Terminal Form :
- Gull wing
- Number of Pins :
- 4
- Max Power Dissipation :
- 2W
- ECCN Code :
- EAR99
- Collector Emitter Saturation Voltage :
- 750mV
- Pbfree Code :
- yes
- Collector Emitter Voltage (VCEO) :
- 400V
- Terminal Finish :
- Tin (Sn)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Emitter Base Voltage (VEBO) :
- 6V
- Published :
- 2009
- Lead Free :
- Lead Free
- Terminal Position :
- Dual
- Current - Collector Cutoff (Max) :
- 500nA
- Datasheets
- FJT44KTF
FJT44KTF Documents
NPN 150°C TJ 500nA 1 Elements 4 Terminations SILICON NPN TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount
FJT44KTF Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 50 @ 10mA 10V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 750mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 750mV @ 5mA, 50mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 6V.Its current rating is 300mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Single BJT transistor can take a breakdown input voltage of 400V volts.During maximum operation, collector current can be as low as 300mA volts.
FJT44KTF Features
the DC current gain for this device is 50 @ 10mA 10V
a collector emitter saturation voltage of 750mV
the vce saturation(Max) is 750mV @ 5mA, 50mA
the emitter base voltage is kept at 6V
the current rating of this device is 300mA
FJT44KTF Applications
There are a lot of ON Semiconductor
FJT44KTF applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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| Part | Manufacturer | Stock | Description |
|---|---|---|---|
| FJT44TF | onsemi | 1,792 | TRANS NPN 400V 0.3A SOT223-4 |
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