FJT44KTF
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- Mfr.Part #
- FJT44KTF
- Manufacturer
- onsemi
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS NPN 400V 0.3A SOT223-4
- Stock
- 1,143
- In Stock ：
- 1,143
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Width :
- 3.5mm
- Transistor Element Material :
- SILICON
- Mount :
- Surface Mount
- Current Rating :
- 300mA
- Voltage - Rated DC :
- 400V
- Operating Temperature :
- 150°C TJ
- JESD-609 Code :
- e3
- Polarity/Channel Type :
- NPN
- Pbfree Code :
- yes
- Base Part Number :
- FJT44
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 50 @ 10mA 10V
- Max Breakdown Voltage :
- 400V
- Emitter Base Voltage (VEBO) :
- 6V
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Vce Saturation (Max) @ Ib, Ic :
- 750mV @ 5mA, 50mA
- Lead Free :
- Lead Free
- Mounting Type :
- Surface Mount
- Published :
- 2009
- Collector Base Voltage (VCBO) :
- 500V
- Transistor Type :
- NPN
- Package / Case :
- TO-261-4, TO-261AA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Length :
- 6.5mm
- Weight :
- 188.014037mg
- Element Configuration :
- Single
- Power Dissipation :
- 2W
- Terminal Form :
- Gull wing
- Collector Emitter Breakdown Voltage :
- 400V
- Terminal Position :
- Dual
- RoHS Status :
- ROHS3 Compliant
- Number of Elements :
- 1
- Max Collector Current :
- 300mA
- Current :
- 3A
- Current - Collector Cutoff (Max) :
- 500nA
- Height :
- 1.6mm
- Transistor Application :
- SWITCHING
- ECCN Code :
- EAR99
- Terminal Finish :
- Tin (Sn)
- Radiation Hardening :
- No
- Voltage :
- 400V
- Collector Emitter Voltage (VCEO) :
- 400V
- Number of Terminations :
- 4
- Packaging :
- Tape and Reel (TR)
- Factory Lead Time :
- 4 Weeks
- Max Power Dissipation :
- 2W
- Collector Emitter Saturation Voltage :
- 750mV
- Number of Pins :
- 4
- hFE Min :
- 50
- Datasheets
- FJT44KTF
NPN 150°C TJ 500nA 1 Elements 4 Terminations SILICON NPN TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount
FJT44KTF Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 50 @ 10mA 10V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 750mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 750mV @ 5mA, 50mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 6V.Its current rating is 300mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Single BJT transistor can take a breakdown input voltage of 400V volts.During maximum operation, collector current can be as low as 300mA volts.
FJT44KTF Features
the DC current gain for this device is 50 @ 10mA 10V
a collector emitter saturation voltage of 750mV
the vce saturation(Max) is 750mV @ 5mA, 50mA
the emitter base voltage is kept at 6V
the current rating of this device is 300mA
FJT44KTF Applications
There are a lot of ON Semiconductor
FJT44KTF applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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| Part | Manufacturer | Stock | Description |
|---|---|---|---|
| FJT44TF | onsemi | 1,792 | TRANS NPN 400V 0.3A SOT223-4 |
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