FJNS4206RTA

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Element Configuration :

Single

Mounting Type :

Through Hole

Lead Free :

Lead Free

Packaging :

Tape and Box (TB)

Transistor Type :

PNP - Pre-Biased

Collector Emitter Breakdown Voltage :

50V

Max Operating Temperature :

150°C

Polarity :

PNP

Resistor - Emitter Base (R2) :

47 k Ω

Collector Emitter Voltage (VCEO) :

50V

Voltage - Rated DC :

-50V

Power Dissipation :

300mW

Min Operating Temperature :

-55°C

Resistor - Base (R1) :

10 k Ω

Max Collector Current :

100mA

RoHS Status :

RoHS Compliant

Vce Saturation (Max) @ Ib, Ic :

300mV @ 500μA, 10mA

Package / Case :

TO-226-3, TO-92-3 Short Body

DC Current Gain (hFE) (Min) @ Ic, Vce :

68 @ 5mA 5V

Continuous Collector Current :

-100mA

Number of Pins :

3

Max Power Dissipation :

300mW

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

hFE Min :

68

Mount :

Through Hole

Current - Collector Cutoff (Max) :

100nA ICBO

Emitter Base Voltage (VEBO) :

-10V

Frequency - Transition :

200MHz

Current Rating :

-100mA