FJA4313RTU
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- Mfr.Part #
- FJA4313RTU
- Manufacturer
- onsemi
- Package / Case
- TO-3P-3, SC-65-3
- Datasheet
- Download
- Description
- TRANS NPN 250V 17A TO3PN
- Stock
- 48,491
- In Stock ：
- 48,491
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- hFE Min :
- 55
- Frequency :
- 30MHz
- Element Configuration :
- Single
- Emitter Base Voltage (VEBO) :
- 5V
- Current - Collector Cutoff (Max) :
- 5μA ICBO
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 55 @ 1A 5V
- Vce Saturation (Max) @ Ib, Ic :
- 3V @ 800mA, 8A
- Power Dissipation :
- 130W
- Factory Lead Time :
- 6 Weeks
- Transistor Type :
- NPN
- Current Rating :
- 10A
- Transition Frequency :
- 30MHz
- Gain Bandwidth Product :
- 30MHz
- Mount :
- Through Hole
- Lead Free :
- Lead Free
- Number of Elements :
- 1
- Terminal Finish :
- Tin (Sn)
- Number of Terminations :
- 3
- ECCN Code :
- EAR99
- Polarity/Channel Type :
- NPN
- Pbfree Code :
- yes
- Collector Emitter Saturation Voltage :
- 400mV
- Packaging :
- Tube
- Transistor Application :
- AMPLIFIER
- Transistor Element Material :
- SILICON
- JESD-609 Code :
- e3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Temperature :
- 150°C TJ
- Radiation Hardening :
- No
- Voltage - Rated DC :
- 140V
- Collector Emitter Voltage (VCEO) :
- 250V
- Published :
- 2005
- Collector Base Voltage (VCBO) :
- 250V
- Max Power Dissipation :
- 130W
- Weight :
- 6.401g
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 2 weeks ago)
- Package / Case :
- TO-3P-3, SC-65-3
- Number of Pins :
- 3
- Collector Emitter Breakdown Voltage :
- 250V
- Mounting Type :
- Through Hole
- RoHS Status :
- RoHS Compliant
- Max Collector Current :
- 17A
- Datasheets
- FJA4313RTU
FJA4313RTU Documents
NPN 150°C TJ 5μA ICBO 1 Elements 3 Terminations SILICON NPN TO-3P-3, SC-65-3 Tube Through Hole
FJA4313RTU Overview
In this device, the DC current gain is 55 @ 1A 5V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 400mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 3V @ 800mA, 8A.With the emitter base voltage set at 5V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 10A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 30MHz.Single BJT transistor is possible for the collector current to fall as low as 17A volts at Single BJT transistors maximum.
FJA4313RTU Features
the DC current gain for this device is 55 @ 1A 5V
a collector emitter saturation voltage of 400mV
the vce saturation(Max) is 3V @ 800mA, 8A
the emitter base voltage is kept at 5V
the current rating of this device is 10A
a transition frequency of 30MHz
FJA4313RTU Applications
There are a lot of ON Semiconductor
FJA4313RTU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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