FJA4310OTU
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- Mfr.Part #
- FJA4310OTU
- Manufacturer
- onsemi
- Package / Case
- TO-3P-3, SC-65-3
- Datasheet
- Download
- Description
- TRANS NPN 140V 10A TO3P
- Stock
- 2,004
- In Stock ：
- 2,004
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Emitter Saturation Voltage :
- 500mV
- hFE Min :
- 50
- ECCN Code :
- EAR99
- Transistor Application :
- AMPLIFIER
- Transition Frequency :
- 30MHz
- Packaging :
- Tube
- Number of Pins :
- 3
- Current Rating :
- 10A
- Element Configuration :
- Single
- Power Dissipation :
- 100W
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Base Voltage (VCBO) :
- 200V
- Width :
- 5mm
- Max Power Dissipation :
- 100W
- Collector Emitter Voltage (VCEO) :
- 140V
- Polarity/Channel Type :
- NPN
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Operating Temperature :
- 150°C TJ
- Length :
- 15.8mm
- RoHS Status :
- ROHS3 Compliant
- Pbfree Code :
- yes
- Emitter Base Voltage (VEBO) :
- 6V
- Radiation Hardening :
- No
- Factory Lead Time :
- 2 Weeks
- Max Collector Current :
- 10A
- Mount :
- Through Hole
- Lead Free :
- Lead Free
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 70 @ 3A 4V
- Height :
- 20.1mm
- Gain Bandwidth Product :
- 30MHz
- JESD-609 Code :
- e3
- Weight :
- 6.401g
- Transistor Type :
- NPN
- Collector Emitter Breakdown Voltage :
- 140V
- Frequency :
- 30MHz
- Mounting Type :
- Through Hole
- Current - Collector Cutoff (Max) :
- 10μA ICBO
- Number of Elements :
- 1
- Published :
- 2008
- Voltage - Rated DC :
- 140V
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 500mA, 5A
- Transistor Element Material :
- SILICON
- Terminal Finish :
- Tin (Sn)
- Package / Case :
- TO-3P-3, SC-65-3
- Number of Terminations :
- 3
- Datasheets
- FJA4310OTU
FJA4310OTU Documents
NPN 150°C TJ 10μA ICBO 1 Elements 3 Terminations SILICON NPN TO-3P-3, SC-65-3 Tube Through Hole
FJA4310OTU Overview
In this device, the DC current gain is 70 @ 3A 4V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 500mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 500mV @ 500mA, 5A.With the emitter base voltage set at 6V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 10A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 30MHz.Single BJT transistor is possible for the collector current to fall as low as 10A volts at Single BJT transistors maximum.
FJA4310OTU Features
the DC current gain for this device is 70 @ 3A 4V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 500mA, 5A
the emitter base voltage is kept at 6V
the current rating of this device is 10A
a transition frequency of 30MHz
FJA4310OTU Applications
There are a lot of ON Semiconductor
FJA4310OTU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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