FGP20N6S2

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Mfr.Part #
FGP20N6S2
Manufacturer
onsemi
Package / Case
TO-220-3
Datasheet
Download
Description
IGBT 600V 28A 125W TO220AB
Stock
19,362
In Stock :
19,362

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Manufacturer :
onsemi
Product Category :
Transistors - IGBTs - Single
Current - Collector Pulsed (Icm) :
40A
Mount :
Through Hole
Power - Max :
125W
Supplier Device Package :
TO-220-3
Voltage - Collector Emitter Breakdown (Max) :
600V
Test Condition :
390V, 7A, 25Ohm, 15V
Package / Case :
TO-220-3
Power Dissipation :
125W
Element Configuration :
Single
Td (on/off) @ 25°C :
7.7ns/87ns
Packaging :
Tube
Switching Energy :
25μJ (on), 58μJ (off)
Current Rating :
28A
Max Collector Current :
28A
Lead Free :
Lead Free
Collector Emitter Saturation Voltage :
2.2V
Min Operating Temperature :
-55°C
Max Power Dissipation :
125W
Collector Emitter Breakdown Voltage :
600V
Rise Time :
4.5ns
Number of Pins :
3
Input Type :
Standard
Voltage - Rated DC :
600V
Vce(on) (Max) @ Vge, Ic :
2.7V @ 15V, 7A
Mounting Type :
Through Hole
RoHS Status :
RoHS Compliant
Current - Collector (Ic) (Max) :
28A
Operating Temperature :
-55°C~150°C TJ
Max Operating Temperature :
150°C
Gate Charge :
30nC
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Collector Emitter Voltage (VCEO) :
2.7V
Introducing Transistors - IGBTs - Single onsemi FGP20N6S2 from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-220-3, Number of Pins:3, Mounting Type:Through Hole, Operating Temperature:-55°C~150°C TJ, FGP20N6S2 pinout, FGP20N6S2 datasheet PDF, FGP20N6S2 amp .Beyond Transistors - IGBTs - Single onsemi FGP20N6S2 ,we also offer IXYT25N250CHV, IXYX140N120A4, IXYH30N450HV, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi FGP20N6S2


FGP20N6S2 datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available at

FGP20N6S2 Description


The FGH20N6S2D, FGP20N6S2D, and FGB20N6S2D are Low Gate Charge, Low Plateau Voltage SMPS II IGBTs that combine a strong avalanche capability with the fast switching speed of SMPS IGBTs (UIS). These LGC components decrease gate drive power requirements and shorten delay periods. These components are best suited for high voltage switched mode power supply applications where quick switching times, minimal conduction loss, and UIS capabilities are critical requirements.



FGP20N6S2 Features


  • Low Eon

  • Soft Recovery Diode

  • Low Conduction Loss

  • 100kHz Operation at 390V, 7A

  • 200kHZ Operation at 390V, 5A

  • 600V Switching SOA Capability

  • Typical Fall Time. . . . . . . . . . . 85ns at TJ = 125oC

  • Low Gate Charge . . . . . . . . . 30nC at VGE = 15V

  • Low Plateau Voltage . . . . . . . . . . . . .6.5V Typical

  • UIS Rated . . . . . . . . . . . . . . . . . . . . . . . . . 100mJ



FGP20N6S2 Applications


  • Push-Pull circuits

  • Full bridge topologies

  • Half bridge topologies

  • Uninterruptible power supplies

  • Power Factor Correction (PFC) circuits

  • Zero voltage and zero current switching circuits


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