FGP20N60UFDTU

Manufacturer :

onsemi

Product Category :

Transistors - IGBTs - Single

Operating Temperature :

-55°C~150°C TJ

Transistor Element Material :

SILICON

Gate Charge :

63nC

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Weight :

1.8g

Input Type :

Standard

Published :

2008

Contact Plating :

Tin

Transistor Application :

POWER CONTROL

Vce(on) (Max) @ Vge, Ic :

2.4V @ 15V, 20A

Packaging :

Tube

Radiation Hardening :

No

Mounting Type :

Through Hole

Lead Free :

Lead Free

Collector Emitter Breakdown Voltage :

600V

Turn On Delay Time :

13 ns

Polarity/Channel Type :

N-Channel

Height :

16.51mm

RoHS Status :

ROHS3 Compliant

Turn-Off Delay Time :

87 ns

ECCN Code :

EAR99

Test Condition :

400V, 20A, 10 Ω, 15V

IGBT Type :

Field Stop

Fall Time-Max (tf) :

64ns

JEDEC-95 Code :

TO-220AB

Switching Energy :

380μJ (on), 260μJ (off)

Turn On Time :

29 ns

Td (on/off) @ 25°C :

13ns/87ns

HTS Code :

8541.29.00.95

Power - Max :

165W

Max Power Dissipation :

165W

Number of Terminations :

3

Length :

10.67mm

Package / Case :

TO-220-3

Current - Collector Pulsed (Icm) :

60A

Pbfree Code :

yes

Turn Off Time-Nom (toff) :

155 ns

Factory Lead Time :

16 Weeks

Reverse Recovery Time :

35 ns

Lifecycle Status :

ACTIVE (Last Updated: 1 week ago)

Number of Pins :

3

Gate-Emitter Voltage-Max :

20V

Gate-Emitter Thr Voltage-Max :

6.5V

Number of Elements :

1

Collector Emitter Voltage (VCEO) :

600V

Width :

4.83mm

Mount :

Through Hole

Element Configuration :

Single

Max Collector Current :

40A