FGB5N60UNDF

Manufacturer :

onsemi

Product Category :

Transistors - IGBTs - Single

HTS Code :

8541.29.00.95

Gate-Emitter Thr Voltage-Max :

8.5V

Width :

9.65mm

Terminal Finish :

Tin (Sn)

Test Condition :

400V, 5A, 10 Ω, 15V

Switching Energy :

80μJ (on), 70μJ (off)

Lead Free :

Lead Free

Number of Terminations :

2

Polarity/Channel Type :

N-Channel

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

Weight :

1.31247g

Turn Off Time-Nom (toff) :

151.6 ns

Current - Collector Pulsed (Icm) :

15A

Max Power Dissipation :

73.5W

Reverse Recovery Time :

35 ns

Factory Lead Time :

5 Weeks

JESD-30 Code :

R-PSSO-G2

Number of Pins :

3

Collector Emitter Breakdown Voltage :

600V

Terminal Form :

Gull wing

Collector Emitter Voltage (VCEO) :

600V

Height :

4.83mm

Transistor Application :

Motor Control

ECCN Code :

EAR99

Td (on/off) @ 25°C :

5.4ns/25.4ns

Mount :

Surface Mount

Vce(on) (Max) @ Vge, Ic :

2.4V @ 15V, 5A

Operating Temperature :

-55°C~150°C TJ

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

RoHS Status :

ROHS3 Compliant

IGBT Type :

NPT

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Fall Time-Max (tf) :

202ns

Input Type :

Standard

Max Collector Current :

10A

Turn On Time :

7.5 ns

Transistor Element Material :

SILICON

Pbfree Code :

yes

Packaging :

Tube

Case Connection :

COLLECTOR

Collector Emitter Saturation Voltage :

2.4V

Power - Max :

73.5W

Gate Charge :

12.1nC

Radiation Hardening :

No

JESD-609 Code :

e3

Gate-Emitter Voltage-Max :

20V

Length :

10.67mm

Number of Elements :

1

Element Configuration :

Single

Mounting Type :

Surface Mount

Published :

2013