FGB5N60UNDF

Manufacturer :

Fairchild Semiconductor

Product Category :

Transistors - IGBTs - Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Td (on/off) @ 25°C :

5.4ns/25.4ns

Fall Time-Max (tf) :

202ns

RoHS Status :

ROHS3 Compliant

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Collector Emitter Voltage (VCEO) :

600V

Terminal Finish :

Tin (Sn)

Vce(on) (Max) @ Vge, Ic :

2.4V @ 15V, 5A

Packaging :

Tube

JESD-30 Code :

R-PSSO-G2

Gate-Emitter Thr Voltage-Max :

8.5V

IGBT Type :

NPT

Published :

2013

Gate Charge :

12.1nC

Element Configuration :

Single

Reverse Recovery Time :

35 ns

Current - Collector Pulsed (Icm) :

15A

Terminal Form :

Gull wing

Weight :

1.31247g

Turn On Time :

7.5 ns

Operating Temperature :

-55°C~150°C TJ

Collector Emitter Saturation Voltage :

2.4V

Number of Pins :

3

Switching Energy :

80μJ (on), 70μJ (off)

Mounting Type :

Surface Mount

Test Condition :

400V, 5A, 10 Ω, 15V

Transistor Application :

Motor Control

Max Power Dissipation :

73.5W

Number of Terminations :

2

Polarity/Channel Type :

N-Channel

Height :

4.83mm

Power - Max :

73.5W

Pbfree Code :

yes

Width :

9.65mm

ECCN Code :

EAR99

Number of Elements :

1

Radiation Hardening :

No

Length :

10.67mm

HTS Code :

8541.29.00.95

Collector Emitter Breakdown Voltage :

600V

Input Type :

Standard

Gate-Emitter Voltage-Max :

20V

Factory Lead Time :

5 Weeks

Mount :

Surface Mount

Lead Free :

Lead Free

Case Connection :

COLLECTOR

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

JESD-609 Code :

e3

Max Collector Current :

10A

Transistor Element Material :

SILICON

Turn Off Time-Nom (toff) :

151.6 ns