FGB30N6S2T

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Mfr.Part #
FGB30N6S2T
Manufacturer
Fairchild Semiconductor
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Datasheet
Download
Description
N-CHANNEL IGBT
Stock
9,352
In Stock :
9,352

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Manufacturer :
Fairchild Semiconductor
Product Category :
Transistors - IGBTs - Single
Package / Case :
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Current - Collector Pulsed (Icm) :
108A
Max Breakdown Voltage :
600V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Number of Pins :
3
Input Type :
Standard
Power Dissipation :
167W
Mounting Type :
Surface Mount
Td (on/off) @ 25°C :
6ns/40ns
Operating Temperature :
-55°C~150°C TJ
Mount :
Surface Mount
Switching Energy :
55μJ (on), 110μJ (off)
Voltage - Rated DC :
600V
Test Condition :
390V, 12A, 10 Ω, 15V
Collector Emitter Voltage (VCEO) :
2.5V
Base Part Number :
FGB30N6
Lead Free :
Lead Free
Rise Time :
10ns
Max Collector Current :
45A
Max Power Dissipation :
167W
RoHS Status :
RoHS Compliant
Vce(on) (Max) @ Vge, Ic :
2.5V @ 15V, 12A
Element Configuration :
Single
Gate Charge :
23nC
Collector Emitter Saturation Voltage :
2V
Collector Emitter Breakdown Voltage :
600V
Packaging :
Tape and Reel (TR)
Current Rating :
45A
Datasheets
FGB30N6S2T
Introducing Transistors - IGBTs - Single Fairchild Semiconductor FGB30N6S2T from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-263-3, D2Pak (2 Leads + Tab), TO-263AB, Number of Pins:3, Mounting Type:Surface Mount, Operating Temperature:-55°C~150°C TJ, Base Part Number:FGB30N6, FGB30N6S2T pinout, FGB30N6S2T datasheet PDF, FGB30N6S2T amp .Beyond Transistors - IGBTs - Single Fairchild Semiconductor FGB30N6S2T ,we also offer IXYT25N250CHV, IXYX140N120A4, IXYH30N450HV, Our vast inventory has you covered. Contact us now for immediate solutions.

Fairchild Semiconductor FGB30N6S2T


FGB30N6S2T datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available at

FGB30N6S2T                 Description

 

The FGH30N6S2, FGP30N6S2, and FGB30N6S2 are Low Gate Charge, Low Plateau Voltage SMPS II IGBTs combining the fast switching speed of the SMPS IGBTs along with lower gate charge and plateau voltage and avalanche capability (UIS). These LGC devices shorten delay times, and reduce the power requirement of the gate drive. These devices are ideally suited for high voltage switched mode power supply applications where low conduction loss, fast switching times and UIS capability are essential.

 

FGB30N6S2T            Applications

 

Power Factor Correction (PFC) circuits

Full bridge topologies

Half bridge topologies

Push-Pull circuits

Uninterruptible power supplies

Zero voltage and zero current switching circuits

 

FGB30N6S2T               Features

 

100kHz Operation at 390V, 14A

200kHZ Operation at 390V, 9A

600V Switching SOA Capability

Typical Fall Time. . . . . . . . . . . 90ns at TJ = 125oC

Low Gate Charge . . . . . . . . . 23nC at VGE = 15V

Low Plateau Voltage . . . . . . . . . . . . .6.5V Typical

UIS Rated . . . . . . . . . . . . . . . . . . . . . . . . . 150mJ

Low Conduction Loss


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