FGB30N6S2T

Manufacturer :

onsemi

Product Category :

Transistors - IGBTs - Single

Current - Collector Pulsed (Icm) :

108A

Number of Pins :

3

Max Breakdown Voltage :

600V

Operating Temperature :

-55°C~150°C TJ

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Collector Emitter Saturation Voltage :

2V

Td (on/off) @ 25°C :

6ns/40ns

Collector Emitter Breakdown Voltage :

600V

Base Part Number :

FGB30N6

Current Rating :

45A

Max Power Dissipation :

167W

Switching Energy :

55μJ (on), 110μJ (off)

Element Configuration :

Single

Power Dissipation :

167W

Collector Emitter Voltage (VCEO) :

2.5V

Voltage - Rated DC :

600V

Max Collector Current :

45A

Rise Time :

10ns

Packaging :

Tape and Reel (TR)

RoHS Status :

RoHS Compliant

Input Type :

Standard

Gate Charge :

23nC

Vce(on) (Max) @ Vge, Ic :

2.5V @ 15V, 12A

Test Condition :

390V, 12A, 10 Ω, 15V

Mount :

Surface Mount

Mounting Type :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Lead Free :

Lead Free