FGA90N33ATDTU

Manufacturer :

onsemi

Product Category :

Transistors - IGBTs - Single

Element Configuration :

Single

Published :

2004

Operating Temperature :

-55°C~150°C TJ

Packaging :

Tube

Max Power Dissipation :

223W

Input Type :

Standard

Radiation Hardening :

No

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

RoHS Compliant

IGBT Type :

Trench

Package / Case :

TO-3P-3, SC-65-3

Transistor Element Material :

SILICON

Number of Elements :

1

Gate Charge :

95nC

Polarity/Channel Type :

N-Channel

Number of Pins :

3

Turn Off Time-Nom (toff) :

360 ns

Collector Emitter Voltage (VCEO) :

330V

Max Collector Current :

90A

Number of Terminations :

3

HTS Code :

8541.29.00.95

ECCN Code :

EAR99

Lead Free :

Lead Free

Current - Collector Pulsed (Icm) :

330A

Pbfree Code :

yes

Power - Max :

223W

Factory Lead Time :

36 Weeks

Additional Feature :

LOW CONDUCTION LOSS

Lifecycle Status :

ACTIVE, NOT REC (Last Updated: 4 days ago)

Collector Emitter Breakdown Voltage :

330V

Mounting Type :

Through Hole

Vce(on) (Max) @ Vge, Ic :

1.4V @ 15V, 20A

Mount :

Through Hole

Transistor Application :

POWER CONTROL

Reverse Recovery Time :

23 ns

Turn On Time :

60 ns

Terminal Finish :

MATTE TIN

JESD-609 Code :

e3

Weight :

6.401g