FGA90N30TU
- Mfr.Part #
- FGA90N30TU
- Manufacturer
- onsemi
- Package / Case
- TO-3P-3, SC-65-3
- Datasheet
- Download
- Description
- IGBT 300V 90A 219W TO3P
- Stock
- 891
- In Stock :
- 891
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - IGBTs - Single
- Current - Collector (Ic) (Max) :
- 90A
- Power - Max :
- 219W
- Power Dissipation :
- 219W
- Lead Free :
- Lead Free
- Collector Emitter Breakdown Voltage :
- 300V
- Package / Case :
- TO-3P-3, SC-65-3
- Supplier Device Package :
- TO-3P
- Element Configuration :
- Single
- Max Power Dissipation :
- 219W
- Gate Charge :
- 87nC
- RoHS Status :
- RoHS Compliant
- Mount :
- Through Hole
- Current Rating :
- 90A
- Voltage - Collector Emitter Breakdown (Max) :
- 300V
- Operating Temperature :
- -55°C~150°C TJ
- Min Operating Temperature :
- -55°C
- Max Operating Temperature :
- 150°C
- Current - Collector Pulsed (Icm) :
- 220A
- Radiation Hardening :
- No
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Voltage - Rated DC :
- 300V
- Collector Emitter Voltage (VCEO) :
- 300V
- Number of Pins :
- 3
- Packaging :
- Tube
- Collector Emitter Saturation Voltage :
- 1.9V
- Max Collector Current :
- 90A
- Vce(on) (Max) @ Vge, Ic :
- 1.4V @ 15V, 20A
- Input Type :
- Standard
- Rise Time :
- 200ns
- Mounting Type :
- Through Hole
- Datasheets
- FGA90N30TU

FGA90N30TU datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available at
FGA90N30TU Description
FGA90N30 uses unified IGBT technology, which minimizes switching and conduction losses. When it comes to PDP applications, FGA90N30 provides the best solution because low conduction loss is crucial. FGA90N30TU is an N-channel single IGBT transistor from the manufacturer Fairchild Semiconductor with a breakdown voltage of 300V.
FGA90N30TU Features
-
High Current Capability
-
Low saturation voltage: V CE(sat), Typ = 1.1V@ IC = 20A
-
High Input Impedance
FGA90N30TU Applications
-
Power Management
-
Consumer Electronics
-
Portable Devices
-
Industrial
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