FF900R12IP4BOSA2

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Mfr.Part #
FF900R12IP4BOSA2
Manufacturer
Infineon Technologies
Package / Case
Module
Datasheet
Download
Description
IGBT MOD 1200V 900A 5100W
Stock
1
In Stock :
1

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Manufacturer :
Infineon Technologies
Product Category :
Transistors - IGBTs - Modules
Turn On Time :
370 ns
Transistor Element Material :
SILICON
Case Connection :
Isolated
Current - Collector Cutoff (Max) :
5mA
Series :
PrimePack™2
Published :
2002
Polarity/Channel Type :
N-Channel
Terminal Form :
UNSPECIFIED
Configuration :
Single
Input :
Standard
RoHS Status :
ROHS3 Compliant
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
ECCN Code :
EAR99
Halogen Free :
Not Halogen Free
Power - Max :
5100W
Mounting Type :
Chassis Mount
Number of Pins :
10
NTC Thermistor :
yes
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Pin Count :
11
JESD-30 Code :
R-XUFM-X7
Number of Terminations :
7
Factory Lead Time :
14 Weeks
Pbfree Code :
No
Transistor Application :
POWER CONTROL
IGBT Type :
Trench Field Stop
Qualification Status :
Not Qualified
Operating Temperature :
-40°C~150°C TJ
Voltage - Collector Emitter Breakdown (Max) :
1200V
Number of Elements :
2
Current - Collector (Ic) (Max) :
900A
Vce(on) (Max) @ Vge, Ic :
2.05V @ 15V, 900A
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Element Configuration :
Dual
Terminal Position :
UPPER
Lead Free :
Contains Lead
Surface Mount :
No
Turn Off Time-Nom (toff) :
1300 ns
Input Capacitance (Cies) @ Vce :
54nF @ 25V
Package / Case :
Module
Datasheets
FF900R12IP4BOSA2
Introducing Transistors - IGBTs - Modules Infineon Technologies FF900R12IP4BOSA2 from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Chassis Mount, Number of Pins:10, Number of Terminations:7, Operating Temperature:-40°C~150°C TJ, Package / Case:Module, FF900R12IP4BOSA2 pinout, FF900R12IP4BOSA2 datasheet PDF, FF900R12IP4BOSA2 amp .Beyond Transistors - IGBTs - Modules Infineon Technologies FF900R12IP4BOSA2 ,we also offer FS450R12KE3BOSA1, VS-GT80DA120U, FD450R12KE4PHOSA1, Our vast inventory has you covered. Contact us now for immediate solutions.

Infineon Technologies FF900R12IP4BOSA2


FF900R12IP4BOSA2 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available at

FF900R12IP4BOSA2                    Description


An IGBT is a is power semiconductor die and is the short form of insulated-gate bipolar transistor. An IGBT power module is the assembly and physical packaging of several IGBT power semiconductor dies in one package.




FF900R12IP4BOSA2                    Applications

·Auxiliary Inverters

·High Power Converters

·Motor Drives Traction Drives

·UPS Systems

·Wind Turbines

 

FF900R12IP4BOSA2                    Features

·Extended Operation Temperature Tyop

·High DC Stability

·High Short Circuit Capability   Self Limiting Short Circuit Current

·Unbeatable Robustness

·VcEsat   with positive   Temperature Coefficient

·Low VCEs   at

 

Mechanical Features

·4kVAC 1min Insulation

·Package with   CTI>400

·High Cree   page and Clearance Distances

·High Power and Thermal Cycling Capability

·High Power Density

 


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