FF225R12MS4BOSA1

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Mfr.Part #
FF225R12MS4BOSA1
Manufacturer
Infineon Technologies
Package / Case
Module
Datasheet
Download
Description
IGBT MOD 1200V 275A 1450W
Stock
36
In Stock :
36

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Manufacturer :
Infineon Technologies
Product Category :
Transistors - IGBTs - Modules
Package / Case :
Module
Power - Max :
1450W
Halogen Free :
Not Halogen Free
Operating Temperature :
-40°C~125°C
Input :
Standard
Qualification Status :
Not Qualified
RoHS Status :
RoHS Compliant
Turn Off Time-Nom (toff) :
590 ns
Number of Pins :
11
Number of Terminations :
11
Pbfree Code :
No
NTC Thermistor :
yes
Transistor Element Material :
SILICON
Mount :
Screw
Element Configuration :
Dual
Published :
2002
Pin Count :
11
Case Connection :
Isolated
Terminal Form :
UNSPECIFIED
Collector Emitter Voltage (VCEO) :
1.2kV
Configuration :
2 Independent
Voltage - Collector Emitter Breakdown (Max) :
1200V
Mounting Type :
Chassis Mount
Current - Collector Cutoff (Max) :
5mA
Max Collector Current :
275A
Moisture Sensitivity Level (MSL) :
Not Applicable
Turn On Time :
180 ns
Terminal Position :
UPPER
Input Capacitance (Cies) @ Vce :
15nF @ 25V
Factory Lead Time :
16 Weeks
Lead Free :
Contains Lead
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
ECCN Code :
EAR99
Vce(on) (Max) @ Vge, Ic :
3.7V @ 15V, 225A
Number of Elements :
2
Polarity/Channel Type :
N-Channel
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Datasheets
FF225R12MS4BOSA1
Introducing Transistors - IGBTs - Modules Infineon Technologies FF225R12MS4BOSA1 from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:Module, Operating Temperature:-40°C~125°C, Number of Pins:11, Number of Terminations:11, Mounting Type:Chassis Mount, FF225R12MS4BOSA1 pinout, FF225R12MS4BOSA1 datasheet PDF, FF225R12MS4BOSA1 amp .Beyond Transistors - IGBTs - Modules Infineon Technologies FF225R12MS4BOSA1 ,we also offer FS450R12KE3BOSA1, VS-GT80DA120U, FD450R12KE4PHOSA1, Our vast inventory has you covered. Contact us now for immediate solutions.

Infineon Technologies FF225R12MS4BOSA1


FF225R12MS4BOSA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available at

FF225R12MS4BOSA1 Description


The FF225R12MS4BOSA1 is an EconoDUAL?3 module with fast IGBT2 for high switching frequency. Insulated-gate bipolar transistor, or IGBT, is a type of power semiconductor die. The physical construction and packaging of multiple IGBT power semiconductor die into a single package is known as an IGBT power module.



FF225R12MS4BOSA1 Features


  • No Plugs and Cables required

  • Ideal for Low Inductive System Designs

  • Easy separation of DC and AC

  • Optimized Thermal Resistance Case to Heat Sink

  • Highest Power Density for compact Inverter Designs

  • Compact Modules

  • Easy and most reliable assembly



FF225R12MS4BOSA1 Applications


  • Motor control and drives

  • Servo motor – controller and driver

  • Uninterruptible Power Supplies (UPS)

  • As a switch


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