FF225R12ME4PBPSA1
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- Mfr.Part #
- FF225R12ME4PBPSA1
- Manufacturer
- Infineon Technologies
- Package / Case
- Module
- Datasheet
- Download
- Description
- IGBT MOD 1200V 450A 20MW
- Stock
- 4
- In Stock ：
- 4
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - IGBTs - Modules
- Factory Lead Time :
- 16 Weeks
- NTC Thermistor :
- yes
- Package / Case :
- Module
- Mounting Type :
- Chassis Mount
- Published :
- 2002
- RoHS Status :
- ROHS3 Compliant
- Series :
- EconoDUAL™ 3
- Input Capacitance (Cies) @ Vce :
- 13nF @ 25V
- Operating Temperature :
- -40°C~150°C TJ
- Power - Max :
- 20mW
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Input :
- Standard
- Configuration :
- Half Bridge
- Vce(on) (Max) @ Vge, Ic :
- 2.15V @ 15V, 225A
- Current - Collector (Ic) (Max) :
- 450A
- IGBT Type :
- Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max) :
- 1200V
- Current - Collector Cutoff (Max) :
- 3mA
- Datasheets
- FF225R12ME4PBPSA1
FF225R12ME4PBPSA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available at
FF225R12ME4PBPSA1 Description
FF225R12ME4PBPSA1 transistor is a MOS field-effect transistor designed to be used in signal applications. The special low thermal resistance packaging makes FF225R12ME4PBPSA1 MOSFET suitable for ISM applications in which reliability and durability are essential. It has the common source configuration.
FF225R12ME4PBPSA1 Features
Gold metalization
Excellent thermal stability
Common source configuration
Thermally enhanced packaging
FF225R12ME4PBPSA1 Applications
ISM applications
DC large signal applications
Power factor correction
Electronic lamp ballasts
Flat panel display
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