FF200R12KE4PHOSA1

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Mfr.Part #
FF200R12KE4PHOSA1
Manufacturer
Infineon Technologies
Package / Case
Module
Datasheet
Download
Description
IGBT MODULE 1200V 200A
Stock
43,232
In Stock :
43,232

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Manufacturer :
Infineon Technologies
Product Category :
Transistors - IGBTs - Modules
Factory Lead Time :
14 Weeks
NTC Thermistor :
No
Surface Mount :
No
Mounting Type :
Chassis Mount
Terminal Form :
UNSPECIFIED
Vce(on) (Max) @ Vge, Ic :
2.15V @ 15V, 200A
RoHS Status :
ROHS3 Compliant
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Package / Case :
Module
Polarity/Channel Type :
N-Channel
Transistor Application :
POWER CONTROL
Voltage - Collector Emitter Breakdown (Max) :
1200V
Number of Elements :
2
Current - Collector (Ic) (Max) :
200A
Case Connection :
Isolated
Current - Collector Cutoff (Max) :
5mA
Input :
Standard
Input Capacitance (Cies) @ Vce :
14nF @ 25V
Operating Temperature :
-40°C~150°C
Turn On Time :
325 ns
JESD-30 Code :
R-XUFM-X7
Transistor Element Material :
SILICON
Published :
2007
IGBT Type :
Trench Field Stop
Additional Feature :
UL APPROVED
Configuration :
Half Bridge
Turn Off Time-Nom (toff) :
800 ns
Number of Terminations :
7
Terminal Position :
UPPER
Datasheets
FF200R12KE4PHOSA1
Introducing Transistors - IGBTs - Modules Infineon Technologies FF200R12KE4PHOSA1 from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Chassis Mount, Package / Case:Module, Operating Temperature:-40°C~150°C, Number of Terminations:7, FF200R12KE4PHOSA1 pinout, FF200R12KE4PHOSA1 datasheet PDF, FF200R12KE4PHOSA1 amp .Beyond Transistors - IGBTs - Modules Infineon Technologies FF200R12KE4PHOSA1 ,we also offer FS450R12KE3BOSA1, VS-GT80DA120U, FD450R12KE4PHOSA1, Our vast inventory has you covered. Contact us now for immediate solutions.

Infineon Technologies FF200R12KE4PHOSA1


FF200R12KE4PHOSA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available at

FF200R12KE4PHOSA1 Description


FF200R12KE4PHOSA1 belongs to the family of IGBT modules provided by Infineon Technologies. It is a bipolar device with a MOS structure, which belongs to a power device with high-speed performance of power MOSFET and low-resistance performance of bipolar. It combines the advantages of power transistor (Giant Transistor-GTR) and power field effect transistor (Power MOSFET), has good characteristics, and has a wide range of applications. 



FF200R12KE4PHOSA1 Features


Energy saving

Easy installation and maintenance

Stable heat dissipation

Low switching losses

Unbeatable robustness



FF200R12KE4PHOSA1 Applications


High-power converters

Motor drives

UPS systems

Wind turbines


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