FDY3000NZ

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Element Configuration :

Dual

Package / Case :

SOT-563, SOT-666

Number of Pins :

6

JESD-609 Code :

e3

Power Dissipation :

625mW

RoHS Status :

ROHS3 Compliant

Turn On Delay Time :

6 ns

Vgs(th) (Max) @ Id :

1.3V @ 250µA

FET Technology :

METAL-OXIDE SEMICONDUCTOR

FET Feature :

Logic Level Gate

Dual Supply Voltage :

20V

Width :

1.2mm

Threshold Voltage :

1V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Resistance :

700mOhm

Additional Feature :

ESD Protection

Packaging :

Tape and Reel (TR)

Number of Elements :

2

Number of Channels :

2

Power - Max :

446mW

Weight :

32mg

Termination :

SMD/SMT

Height :

700μm

Gate to Source Voltage (Vgs) :

12V

Transistor Element Material :

SILICON

Pbfree Code :

yes

Series :

PowerTrench®

Input Capacitance (Ciss) (Max) @ Vds :

60pF @ 10V

Continuous Drain Current (ID) :

600mA

Terminal Finish :

Tin (Sn)

Fall Time (Typ) :

8 ns

Mount :

Surface Mount

ECCN Code :

EAR99

Mounting Type :

Surface Mount

Published :

2007

Factory Lead Time :

10 Weeks

Rise Time :

8ns

Number of Terminations :

6

Gate Charge (Qg) (Max) @ Vgs :

1.1nC @ 4.5V

Rds On (Max) @ Id, Vgs :

700m Ω @ 600mA, 4.5V

Operating Temperature :

-55°C~150°C TJ

Lead Free :

Lead Free

Terminal Form :

Flat

Transistor Application :

SWITCHING

Turn-Off Delay Time :

8 ns

Length :

1.6mm

Lifecycle Status :

ACTIVE (Last Updated: 23 hours ago)

Max Power Dissipation :

625mW

Drain to Source Breakdown Voltage :

20V

REACH SVHC :

No SVHC

FET Type :

2 N-Channel (Dual)

Operating Mode :

ENHANCEMENT MODE

Max Junction Temperature (Tj) :

150°C

Radiation Hardening :

No

Nominal Vgs :

1 V