FDY302NZ
- Mfr.Part #
- FDY302NZ
- Manufacturer
- onsemi
- Package / Case
- SC-89, SOT-490
- Datasheet
- Download
- Description
- MOSFET N-CH 20V 600MA SC89-3
- Stock
- 78,219
- In Stock :
- 78,219
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Terminal Position :
- Dual
- Element Configuration :
- Single
- Number of Terminations :
- 3
- Lead Free :
- Lead Free
- Fall Time (Typ) :
- 2.4 ns
- Operating Mode :
- ENHANCEMENT MODE
- Weight :
- 30mg
- FET Type :
- N-Channel
- Vgs(th) (Max) @ Id :
- 1.5V @ 250µA
- Current - Continuous Drain (Id) @ 25°C :
- 600mA Ta
- Gate Charge (Qg) (Max) @ Vgs :
- 1.1nC @ 4.5V
- Factory Lead Time :
- 8 Weeks
- Mount :
- Surface Mount
- Number of Pins :
- 3
- Input Capacitance (Ciss) (Max) @ Vds :
- 60pF @ 10V
- Operating Temperature :
- -55°C~150°C TJ
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Continuous Drain Current (ID) :
- 600mA
- Rds On (Max) @ Id, Vgs :
- 300m Ω @ 600mA, 4.5V
- ECCN Code :
- EAR99
- Height :
- 780μm
- Series :
- PowerTrench®
- JESD-609 Code :
- e3
- Length :
- 1.7mm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mounting Type :
- Surface Mount
- Drain to Source Breakdown Voltage :
- 20V
- Transistor Element Material :
- SILICON
- Number of Elements :
- 1
- Packaging :
- Tape and Reel (TR)
- Vgs (Max) :
- ±12V
- Published :
- 2017
- Package / Case :
- SC-89, SOT-490
- Turn On Delay Time :
- 6 ns
- Contact Plating :
- Tin
- Power Dissipation :
- 625mW
- Turn-Off Delay Time :
- 8 ns
- RoHS Status :
- ROHS3 Compliant
- Width :
- 980μm
- Terminal Form :
- Flat
- Drive Voltage (Max Rds On,Min Rds On) :
- 1.8V 4.5V
- Pbfree Code :
- yes
- Power Dissipation-Max :
- 625mW Ta
- Rise Time :
- 8ns
- Drain Current-Max (Abs) (ID) :
- 0.6A
- Transistor Application :
- SWITCHING
- Gate to Source Voltage (Vgs) :
- 12V
- Radiation Hardening :
- No
- Datasheets
- FDY302NZ

N-Channel Tape & Reel (TR) 300m Ω @ 600mA, 4.5V ±12V 60pF @ 10V 1.1nC @ 4.5V SC-89, SOT-490
FDY302NZ Description
FDY302NZ belongs to the family of single N-channel PowerTrench? MOSFETs which are provided by ON Semiconductor based on the advanced power trench process to optimize the RDS (on) @ VGS = 2.5 V. Due to its specific features, it is ideally suitable for Li-lon battery pack.
FDY302NZ Features
-
Advanced power trench process
-
ESD protection diode
-
RoHS compliant
FDY302NZ Applications
-
Li-lon battery pack
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