FDS6990AS
- Mfr.Part #
- FDS6990AS
- Manufacturer
- onsemi
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- MOSFET 2N-CH 30V 7.5A 8SOIC
- Stock
- 46,325
- In Stock :
- 46,325
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Arrays
- Number of Terminations :
- 8
- FET Feature :
- Logic Level Gate
- Rds On (Max) @ Id, Vgs :
- 22m Ω @ 7.5A, 10V
- Operating Mode :
- ENHANCEMENT MODE
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Width :
- 4mm
- Terminal Finish :
- Tin (Sn)
- Element Configuration :
- Dual
- Turn On Delay Time :
- 8 ns
- Pbfree Code :
- yes
- Drain Current-Max (Abs) (ID) :
- 7.5A
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Lead Free :
- Lead Free
- RoHS Status :
- ROHS3 Compliant
- Factory Lead Time :
- 10 Weeks
- Qualification Status :
- Not Qualified
- Resistance :
- 22mOhm
- Number of Channels :
- 2
- Transistor Element Material :
- SILICON
- Fall Time (Typ) :
- 8 ns
- JESD-609 Code :
- e3
- Drain to Source Breakdown Voltage :
- 30V
- Current - Continuous Drain (Id) @ 25°C :
- 7.5A
- Nominal Vgs :
- 1.7 V
- Operating Temperature :
- -55°C~150°C TJ
- Gate to Source Voltage (Vgs) :
- 20V
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Threshold Voltage :
- 1.7V
- Height :
- 1.75mm
- Vgs(th) (Max) @ Id :
- 3V @ 1mA
- Number of Pins :
- 8
- Rise Time :
- 8ns
- Peak Reflow Temperature (Cel) :
- 260
- ECCN Code :
- EAR99
- FET Type :
- 2 N-Channel (Dual)
- Termination :
- SMD/SMT
- Dual Supply Voltage :
- 30V
- Published :
- 2005
- Max Junction Temperature (Tj) :
- 150°C
- Turn-Off Delay Time :
- 24 ns
- REACH SVHC :
- No SVHC
- Terminal Form :
- Gull wing
- Packaging :
- Tape and Reel (TR)
- Length :
- 5mm
- Series :
- PowerTrench®, SyncFET™
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Input Capacitance (Ciss) (Max) @ Vds :
- 550pF @ 15V
- Weight :
- 187mg
- Mount :
- Surface Mount
- Mounting Type :
- Surface Mount
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Gate Charge (Qg) (Max) @ Vgs :
- 14nC @ 5V
- Transistor Application :
- SWITCHING
- Number of Elements :
- 2
- Power Dissipation :
- 2W
- Max Power Dissipation :
- 900mW
- Continuous Drain Current (ID) :
- 7.5mA
- Datasheets
- FDS6990AS

FDS6990AS datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at
FDS6990AS Description
The FDS6990AS is designed to replace one dual SO-8 MOSFET and two Schottky diodes in a synchronous DC:DC power supply. This 30V MOSFET is designed to maximize power conversion efficiency, providing low RDS (on) voltage and low gate charge. Each MOSFET includes integrated Schottky diodes using monolithic SyncFET technology. As a low-end switch in synchronous rectifier, the performance of FDS6990AS is similar to that of FDS6990A in parallel with Schottky diodes.
FDS6990AS Features
7.5A, 30V
RDS(ON) = 22 mΩ @ VGS = 10V
RDS(ON) = 28 mΩ @ VGS = 4.5V
Includes SyncFET Schottky body diode
Low gate charge (10nC typical)
High performance trench technology for extremely low RDS(ON)
High power and current handling capability
FDS6990AS Applications
This product is general usage and suitable for many different applications.
DC/DC Converters
Motor Drives
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