FDS6990AS

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

ECCN Code :

EAR99

Nominal Vgs :

1.7 V

RoHS Status :

ROHS3 Compliant

Terminal Finish :

Tin (Sn)

Mounting Type :

Surface Mount

Power Dissipation :

2W

Mount :

Surface Mount

Operating Temperature :

-55°C~150°C TJ

Peak Reflow Temperature (Cel) :

260

Transistor Element Material :

SILICON

Dual Supply Voltage :

30V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Pbfree Code :

yes

Threshold Voltage :

1.7V

REACH SVHC :

No SVHC

Rds On (Max) @ Id, Vgs :

22m Ω @ 7.5A, 10V

Drain to Source Breakdown Voltage :

30V

Width :

4mm

Number of Terminations :

8

Time@Peak Reflow Temperature-Max (s) :

30

Height :

1.75mm

Qualification Status :

Not Qualified

Rise Time :

8ns

Element Configuration :

Dual

Input Capacitance (Ciss) (Max) @ Vds :

550pF @ 15V

Gate Charge (Qg) (Max) @ Vgs :

14nC @ 5V

Number of Channels :

2

Turn-Off Delay Time :

24 ns

Packaging :

Tape and Reel (TR)

Termination :

SMD/SMT

Factory Lead Time :

10 Weeks

Operating Mode :

ENHANCEMENT MODE

Length :

5mm

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Continuous Drain Current (ID) :

7.5mA

Max Power Dissipation :

900mW

Resistance :

22mOhm

Number of Pins :

8

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

2

Current - Continuous Drain (Id) @ 25°C :

7.5A

Fall Time (Typ) :

8 ns

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Transistor Application :

SWITCHING

Series :

PowerTrench®, SyncFET™

JESD-609 Code :

e3

Gate to Source Voltage (Vgs) :

20V

Turn On Delay Time :

8 ns

Drain Current-Max (Abs) (ID) :

7.5A

Published :

2005

FET Feature :

Logic Level Gate

Max Junction Temperature (Tj) :

150°C

FET Type :

2 N-Channel (Dual)

Weight :

187mg

Lead Free :

Lead Free

Vgs(th) (Max) @ Id :

3V @ 1mA

Terminal Form :

Gull wing