FDS6986AS

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Transistor Application :

SWITCHING

Length :

5mm

Element Configuration :

Dual

Transistor Element Material :

SILICON

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Drain to Source Breakdown Voltage :

30V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Finish :

Tin (Sn)

Mounting Type :

Surface Mount

RoHS Status :

ROHS3 Compliant

Continuous Drain Current (ID) :

7.9mA

Mount :

Surface Mount

REACH SVHC :

No SVHC

Operating Temperature :

-55°C~150°C TJ

Lead Free :

Lead Free

Gate to Source Voltage (Vgs) :

20V

Number of Terminations :

8

Max Power Dissipation :

900mW

Rise Time :

9ns

FET Feature :

Logic Level Gate

Threshold Voltage :

1.7V

Current - Continuous Drain (Id) @ 25°C :

6.5A 7.9A

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

FET Type :

2 N-Channel (Dual)

Terminal Form :

Gull wing

Input Capacitance (Ciss) (Max) @ Vds :

720pF @ 10V

Power Dissipation :

2W

Factory Lead Time :

18 Weeks

Width :

3.99mm

Turn-Off Delay Time :

24 ns

Rds On (Max) @ Id, Vgs :

29m Ω @ 6.5A, 10V

Gate Charge (Qg) (Max) @ Vgs :

17nC @ 10V

Packaging :

Tape and Reel (TR)

Vgs(th) (Max) @ Id :

3V @ 250µA

JESD-609 Code :

e3

Weight :

187mg

Operating Mode :

ENHANCEMENT MODE

Height :

1.5mm

Number of Elements :

2

Fall Time (Typ) :

3 ns

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Voltage - Rated DC :

30V

Resistance :

29mOhm

Published :

2005

Series :

PowerTrench®, SyncFET™

Current Rating :

7.9A

Drain Current-Max (Abs) (ID) :

6.5A

Number of Pins :

8

ECCN Code :

EAR99

Radiation Hardening :

No

Pbfree Code :

yes