FDS6984AS
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- Mfr.Part #
- FDS6984AS
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- SMALL SIGNAL FIELD-EFFECT TRANSI
- Stock
- 1,317
- In Stock ：
- 1,317
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Arrays
- Height :
- 1.5mm
- Operating Temperature :
- -55°C~150°C TJ
- FET Type :
- 2 N-Channel (Dual)
- Turn-Off Delay Time :
- 22 ns
- Weight :
- 187mg
- Resistance :
- 32mOhm
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- Power - Max :
- 900mW
- Factory Lead Time :
- 18 Weeks
- Input Capacitance (Ciss) (Max) @ Vds :
- 420pF @ 15V
- Mount :
- Surface Mount
- Fall Time (Typ) :
- 2 ns
- Number of Pins :
- 8
- REACH SVHC :
- No SVHC
- Continuous Drain Current (ID) :
- 8.5A
- Max Power Dissipation :
- 2W
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Contact Plating :
- Tin
- Threshold Voltage :
- 1.7V
- Width :
- 3.99mm
- Lead Free :
- Lead Free
- Published :
- 2005
- FET Feature :
- Logic Level Gate
- Series :
- PowerTrench®, SyncFET™
- Rise Time :
- 6ns
- Rds On (Max) @ Id, Vgs :
- 31m Ω @ 5.5A, 10V
- Mounting Type :
- Surface Mount
- Current - Continuous Drain (Id) @ 25°C :
- 5.5A 8.5A
- Number of Elements :
- 2
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Gate Charge (Qg) (Max) @ Vgs :
- 11nC @ 10V
- Packaging :
- Tape and Reel (TR)
- Gate to Source Voltage (Vgs) :
- 20V
- Length :
- 5mm
- RoHS Status :
- ROHS3 Compliant
- Drain to Source Breakdown Voltage :
- 30V
- Power Dissipation :
- 2W
- Datasheets
- FDS6984AS
FDS6984AS datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at
FDS6984AS Description
The FDS6984AS is designed to replace two single SO-8 MOSFET and Schottky diodes in synchronous DC:DC power supplies to provide a variety of external voltages for laptops and other battery-powered electronic devices. The FDS6984AS contains two unique 30V, N-channel, logic level, and power slot MOSFET designed to maximize power conversion efficiency. The design of the high-end switch (Q1) focuses on reducing the switching loss, while the low-end switch (Q2) is optimized to reduce the turn-on loss. Q2 also includes a patented combination of MOSFET and Schottky diode monolithic integration.
FDS6984AS Features
Q2
Optimized to minimize conduction losses
Includes SyncFET Schottky diode
8.5A, 30V
Max. RDS(on) = 20 m Ω at VGS = 10 V
Max. RDS(on) = 28 m Ω at VGS = 4.5 V
Q1
Optimized for Low Switching Losses
5.5A, 30V
Max. RDS(on) = 31 m Ω at VGS = 10 V
Max. RDS(on) = 40 m Ω at VGS = 4.5 V
Low gate charge (8nC typical)
RoHS Compliant
FDS6984AS Applications
This product is general usage and suitable for many different applications.
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