FDS6982AS

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Width :

3.99mm

Height :

1.75mm

Published :

2005

Number of Channels :

2

Lead Free :

Lead Free

Voltage - Rated DC :

30V

Nominal Vgs :

1.4 V

Weight :

187mg

Pulsed Drain Current-Max (IDM) :

30A

Max Power Dissipation :

2W

Drain to Source Breakdown Voltage :

30V

Turn-Off Delay Time :

24 ns

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Contact Plating :

Tin

Gate Charge (Qg) (Max) @ Vgs :

15nC @ 10V

Power Dissipation :

2W

Transistor Element Material :

SILICON

Current Rating :

8.6A

JESD-609 Code :

e3

FET Feature :

Logic Level Gate

Series :

PowerTrench®, SyncFET™

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Number of Pins :

8

Vgs(th) (Max) @ Id :

3V @ 250µA

Turn Off Time-Max (toff) :

64ns

Rise Time :

7ns

Turn On Delay Time :

12 ns

Transistor Application :

SWITCHING

Number of Terminations :

8

Current - Continuous Drain (Id) @ 25°C :

6.3A 8.6A

Power - Max :

900mW

Recovery Time :

19 ns

Operating Temperature :

-55°C~150°C TJ

Fall Time (Typ) :

3 ns

Gate to Source Voltage (Vgs) :

20V

Mounting Type :

Surface Mount

Terminal Form :

Gull wing

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Resistance :

28mOhm

Max Junction Temperature (Tj) :

150°C

RoHS Status :

ROHS3 Compliant

Length :

5mm

ECCN Code :

EAR99

Factory Lead Time :

18 Weeks

REACH SVHC :

No SVHC

Number of Elements :

2

Turn On Time-Max (ton) :

34ns

Pbfree Code :

yes

Rds On (Max) @ Id, Vgs :

28m Ω @ 6.3A, 10V

Continuous Drain Current (ID) :

8.6A

Operating Mode :

ENHANCEMENT MODE

Threshold Voltage :

1.9V

Radiation Hardening :

No

Packaging :

Tape and Reel (TR)

FET Type :

2 N-Channel (Dual)

Mount :

Surface Mount

Input Capacitance (Ciss) (Max) @ Vds :

610pF @ 10V

FET Technology :

METAL-OXIDE SEMICONDUCTOR