FDS6975
- Mfr.Part #
- FDS6975
- Manufacturer
- onsemi
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- MOSFET 2P-CH 30V 6A 8SOIC
- Stock
- 5,106
- In Stock :
- 5,106
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Arrays
- Additional Feature :
- LOGIC LEVEL COMPATIBLE
- Rise Time :
- 22ns
- Number of Terminations :
- 8
- RoHS Status :
- ROHS3 Compliant
- Gate Charge (Qg) (Max) @ Vgs :
- 20nC @ 5V
- Nominal Vgs :
- -1.7 V
- Width :
- 4mm
- Number of Elements :
- 2
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- Resistance :
- 32mOhm
- Continuous Drain Current (ID) :
- -6A
- Threshold Voltage :
- -1.7V
- Current Rating :
- -6A
- Mounting Type :
- Surface Mount
- Drain to Source Breakdown Voltage :
- -30V
- Voltage - Rated DC :
- -30V
- Termination :
- SMD/SMT
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Fall Time (Typ) :
- 18 ns
- Dual Supply Voltage :
- -30V
- Max Power Dissipation :
- 2W
- Radiation Hardening :
- No
- Power Dissipation :
- 2W
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mount :
- Surface Mount
- Transistor Application :
- SWITCHING
- REACH SVHC :
- No SVHC
- Drain to Source Voltage (Vdss) :
- 30V
- FET Type :
- 2 P-Channel (Dual)
- Weight :
- 187mg
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- ECCN Code :
- EAR99
- Turn-Off Delay Time :
- 47 ns
- Packaging :
- Tape and Reel (TR)
- Gate to Source Voltage (Vgs) :
- 20V
- Pbfree Code :
- yes
- Terminal Form :
- Gull wing
- Series :
- PowerTrench®
- Length :
- 5mm
- Operating Mode :
- ENHANCEMENT MODE
- Lead Free :
- Lead Free
- Published :
- 2017
- Contact Plating :
- Tin
- Rds On (Max) @ Id, Vgs :
- 32m Ω @ 6A, 10V
- Operating Temperature :
- -55°C~150°C TJ
- Input Capacitance (Ciss) (Max) @ Vds :
- 1540pF @ 15V
- Drain Current-Max (Abs) (ID) :
- 6A
- FET Feature :
- Logic Level Gate
- Height :
- 1.5mm
- Factory Lead Time :
- 10 Weeks
- Number of Pins :
- 8
- Current - Continuous Drain (Id) @ 25°C :
- 6A
- Turn On Delay Time :
- 13 ns
- JESD-609 Code :
- e3
- Power - Max :
- 900mW
- Element Configuration :
- Dual
- Transistor Element Material :
- SILICON
- Datasheets
- FDS6975

FDS6975 datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at
FDS6975 Description
These P-channel logic level MOSFET are manufactured using an advanced PowerTrtch process that is customized to minimize on-resistance while maintaining low gate charge for excellent switching performance. These devices are ideal for laptop applications: load switching and power management, battery charging circuits and DC/DC conversion.
FDS6975 Features
-6 A, -30 V
RDS(ON) = 0.032 Ω @ VGS = -10 V
RDS(ON) = 0.045 Ω @ VGS = -4.5 V.
Low gate charge (14.5nC typical).
High performance trench technology for extremely low RDS(ON).
High power and current handling capability.
FDS6975 Applications
This product is general usage and suitable for many different applications.
Load Switch
Power Management
Battery Charging Circuit
DC/DC Converters
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