FDS6975
- Mfr.Part #
- FDS6975
- Manufacturer
- onsemi
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- MOSFET 2P-CH 30V 6A 8SOIC
- Stock
- 5,106
- In Stock :
- 5,106
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Arrays
- Length :
- 5mm
- Gate Charge (Qg) (Max) @ Vgs :
- 20nC @ 5V
- Dual Supply Voltage :
- -30V
- Terminal Form :
- Gull wing
- Threshold Voltage :
- -1.7V
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Factory Lead Time :
- 10 Weeks
- FET Feature :
- Logic Level Gate
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Height :
- 1.5mm
- Max Power Dissipation :
- 2W
- Radiation Hardening :
- No
- Transistor Element Material :
- SILICON
- Termination :
- SMD/SMT
- Current - Continuous Drain (Id) @ 25°C :
- 6A
- Fall Time (Typ) :
- 18 ns
- REACH SVHC :
- No SVHC
- Operating Temperature :
- -55°C~150°C TJ
- Turn-Off Delay Time :
- 47 ns
- FET Type :
- 2 P-Channel (Dual)
- Voltage - Rated DC :
- -30V
- Contact Plating :
- Tin
- Current Rating :
- -6A
- Pbfree Code :
- yes
- RoHS Status :
- ROHS3 Compliant
- Gate to Source Voltage (Vgs) :
- 20V
- Lead Free :
- Lead Free
- Series :
- PowerTrench®
- Published :
- 2017
- Power Dissipation :
- 2W
- Rise Time :
- 22ns
- Additional Feature :
- LOGIC LEVEL COMPATIBLE
- Drain Current-Max (Abs) (ID) :
- 6A
- Mount :
- Surface Mount
- Number of Terminations :
- 8
- Mounting Type :
- Surface Mount
- Resistance :
- 32mOhm
- Continuous Drain Current (ID) :
- -6A
- Packaging :
- Tape and Reel (TR)
- Turn On Delay Time :
- 13 ns
- Number of Pins :
- 8
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Weight :
- 187mg
- Drain to Source Voltage (Vdss) :
- 30V
- Operating Mode :
- ENHANCEMENT MODE
- Drain to Source Breakdown Voltage :
- -30V
- Element Configuration :
- Dual
- Power - Max :
- 900mW
- JESD-609 Code :
- e3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Nominal Vgs :
- -1.7 V
- Input Capacitance (Ciss) (Max) @ Vds :
- 1540pF @ 15V
- Rds On (Max) @ Id, Vgs :
- 32m Ω @ 6A, 10V
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- Number of Elements :
- 2
- Width :
- 4mm
- ECCN Code :
- EAR99
- Transistor Application :
- SWITCHING
- Datasheets
- FDS6975
FDS6975 Documents

FDS6975 datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at
FDS6975 Description
These P-channel logic level MOSFET are manufactured using an advanced PowerTrtch process that is customized to minimize on-resistance while maintaining low gate charge for excellent switching performance. These devices are ideal for laptop applications: load switching and power management, battery charging circuits and DC/DC conversion.
FDS6975 Features
-6 A, -30 V
RDS(ON) = 0.032 Ω @ VGS = -10 V
RDS(ON) = 0.045 Ω @ VGS = -4.5 V.
Low gate charge (14.5nC typical).
High performance trench technology for extremely low RDS(ON).
High power and current handling capability.
FDS6975 Applications
This product is general usage and suitable for many different applications.
Load Switch
Power Management
Battery Charging Circuit
DC/DC Converters
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