FDS6911

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Terminal Form :

Gull wing

Rds On (Max) @ Id, Vgs :

13m Ω @ 7.5A, 10V

REACH SVHC :

No SVHC

JESD-609 Code :

e3

Packaging :

Tape and Reel (TR)

Voltage - Rated DC :

20V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Series :

PowerTrench®

Gate to Source Voltage (Vgs) :

20V

Number of Pins :

8

Weight :

187mg

Operating Mode :

ENHANCEMENT MODE

Continuous Drain Current (ID) :

7.5A

Gate Charge (Qg) (Max) @ Vgs :

24nC @ 10V

Mounting Type :

Surface Mount

Fall Time (Typ) :

5 ns

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Mount :

Surface Mount

Terminal Finish :

Tin (Sn)

Input Capacitance (Ciss) (Max) @ Vds :

1130pF @ 15V

Height :

1.575mm

Element Configuration :

Dual

Radiation Hardening :

No

RoHS Status :

ROHS3 Compliant

Factory Lead Time :

10 Weeks

Transistor Element Material :

SILICON

Operating Temperature :

-55°C~150°C TJ

Turn On Delay Time :

9 ns

Vgs(th) (Max) @ Id :

3V @ 250µA

Drain to Source Breakdown Voltage :

20V

Max Power Dissipation :

900mW

Current Rating :

7.5A

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Length :

4.9mm

Lead Free :

Lead Free

Power Dissipation :

1.6W

ECCN Code :

EAR99

FET Type :

2 N-Channel (Dual)

Width :

3.9mm

Turn-Off Delay Time :

26 ns

Nominal Vgs :

1.8 V

Number of Terminations :

8

Transistor Application :

SWITCHING

Number of Elements :

2

Pbfree Code :

yes

Rise Time :

5ns

Drain-source On Resistance-Max :

0.013Ohm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Published :

2006

FET Feature :

Logic Level Gate