FDS6900AS

Manufacturer :

Fairchild Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Arrays

ECCN Code :

EAR99

Number of Terminations :

8

Pbfree Code :

yes

Weight :

187mg

Nominal Vgs :

1.9 V

Terminal Form :

Gull wing

JESD-609 Code :

e3

Gate Charge (Qg) (Max) @ Vgs :

15nC @ 10V

Voltage - Rated DC :

30V

Width :

3.99mm

Contact Plating :

Tin

Number of Elements :

2

Rds On (Max) @ Id, Vgs :

27m Ω @ 6.9A, 10V

Threshold Voltage :

1.9V

Factory Lead Time :

18 Weeks

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Element Configuration :

Dual

Operating Mode :

ENHANCEMENT MODE

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Power Dissipation :

2W

Length :

5mm

Resistance :

27mOhm

Termination :

SMD/SMT

Series :

PowerTrench®, SyncFET™

Turn-Off Delay Time :

23 ns

Input Capacitance (Ciss) (Max) @ Vds :

600pF @ 15V

Packaging :

Tape and Reel (TR)

Dual Supply Voltage :

30V

RoHS Status :

ROHS3 Compliant

Current Rating :

8.2A

Mount :

Surface Mount

Package / Case :

8-SOIC (0.154, 3.90mm Width)

FET Type :

2 N-Channel (Dual)

Drain to Source Breakdown Voltage :

30V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

FET Feature :

Logic Level Gate

Number of Pins :

8

Lead Free :

Lead Free

Current - Continuous Drain (Id) @ 25°C :

6.9A 8.2A

Rise Time :

4ns

Transistor Application :

SWITCHING

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Qualification Status :

Not Qualified

Vgs(th) (Max) @ Id :

3V @ 250µA

Operating Temperature :

-55°C~150°C TJ

REACH SVHC :

No SVHC

Max Power Dissipation :

2W

Transistor Element Material :

SILICON

Published :

2005

Continuous Drain Current (ID) :

8.2A

Fall Time (Typ) :

3 ns

Mounting Type :

Surface Mount

Power - Max :

900mW

Drain Current-Max (Abs) (ID) :

6.9A

Gate to Source Voltage (Vgs) :

20V

Height :

1.5mm

FET Technology :

METAL-OXIDE SEMICONDUCTOR