FDS6898AZ

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

REACH SVHC :

No SVHC

Mounting Type :

Surface Mount

Power Dissipation :

2W

Rise Time :

15ns

RoHS Status :

ROHS3 Compliant

Nominal Vgs :

1 V

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Number of Terminations :

8

Element Configuration :

Dual

Turn On Delay Time :

10 ns

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Factory Lead Time :

10 Weeks

Resistance :

14mOhm

Length :

5mm

Drain to Source Breakdown Voltage :

20V

FET Feature :

Logic Level Gate

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Threshold Voltage :

1V

Fall Time (Typ) :

16 ns

Mount :

Surface Mount

Number of Pins :

8

Turn-Off Delay Time :

34 ns

Operating Mode :

ENHANCEMENT MODE

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Current Rating :

9.4A

Lead Free :

Lead Free

Voltage - Rated DC :

20V

Width :

4mm

Gate to Source Voltage (Vgs) :

12V

Vgs(th) (Max) @ Id :

1.5V @ 250µA

Packaging :

Tape and Reel (TR)

Qualification Status :

Not Qualified

Weight :

187mg

Additional Feature :

ESD PROTECTED

Input Capacitance (Ciss) (Max) @ Vds :

1821pF @ 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rds On (Max) @ Id, Vgs :

14m Ω @ 9.4A, 4.5V

Termination :

SMD/SMT

Transistor Application :

SWITCHING

Series :

PowerTrench®

Height :

1.5mm

Gate Charge (Qg) (Max) @ Vgs :

23nC @ 4.5V

JESD-609 Code :

e3

Dual Supply Voltage :

20V

Pbfree Code :

yes

Terminal Form :

Gull wing

ECCN Code :

EAR99

Number of Elements :

2

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Max Power Dissipation :

2W

Power - Max :

900mW

Operating Temperature :

-55°C~150°C TJ

Transistor Element Material :

SILICON

FET Type :

2 N-Channel (Dual)

Contact Plating :

Tin

Continuous Drain Current (ID) :

9.4A