FDS6892A
- Mfr.Part #
- FDS6892A
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- POWER FIELD-EFFECT TRANSISTOR, 7
- Stock
- 22,964
- In Stock :
- 22,964
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Arrays
- FET Type :
- 2 N-Channel (Dual)
- Gate Charge (Qg) (Max) @ Vgs :
- 17nC @ 4.5V
- Weight :
- 187mg
- Pbfree Code :
- yes
- Transistor Application :
- SWITCHING
- Vgs(th) (Max) @ Id :
- 1.5V @ 250µA
- Rise Time :
- 15ns
- Published :
- 2017
- FET Feature :
- Logic Level Gate
- Input Capacitance (Ciss) (Max) @ Vds :
- 1333pF @ 10V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Power - Max :
- 900mW
- Power Dissipation :
- 2W
- Termination :
- SMD/SMT
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Operating Temperature :
- -55°C~150°C TJ
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Rds On (Max) @ Id, Vgs :
- 18m Ω @ 7.5A, 4.5V
- Transistor Element Material :
- SILICON
- Number of Terminations :
- 8
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Element Configuration :
- Dual
- Packaging :
- Tape and Reel (TR)
- RoHS Status :
- ROHS3 Compliant
- Width :
- 4mm
- Factory Lead Time :
- 10 Weeks
- ECCN Code :
- EAR99
- Radiation Hardening :
- No
- Mount :
- Surface Mount
- JESD-609 Code :
- e3
- Nominal Vgs :
- 900 mV
- Number of Pins :
- 8
- Current Rating :
- 7.5A
- Dual Supply Voltage :
- 20V
- Length :
- 5mm
- Continuous Drain Current (ID) :
- 7.5A
- Fall Time (Typ) :
- 9 ns
- Gate to Source Voltage (Vgs) :
- 12V
- Threshold Voltage :
- 900mV
- Resistance :
- 18mOhm
- Height :
- 1.5mm
- REACH SVHC :
- No SVHC
- Max Power Dissipation :
- 2W
- Number of Elements :
- 2
- Contact Plating :
- Tin
- Lead Free :
- Lead Free
- Voltage - Rated DC :
- 20V
- Series :
- PowerTrench®
- Drain to Source Breakdown Voltage :
- 20V
- Terminal Form :
- Gull wing
- Mounting Type :
- Surface Mount
- Operating Mode :
- ENHANCEMENT MODE
- Turn-Off Delay Time :
- 26 ns
- Turn On Delay Time :
- 8 ns
- Pulsed Drain Current-Max (IDM) :
- 30A
- Datasheets
- FDS6892A

FDS6892A datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at
FDS6892A Description
These N-channel logic level MOSFET are manufactured using an advanced PowerTrress process that is customized to minimize on-resistance while maintaining excellent switching performance. These devices are ideal for low-voltage and battery-powered applications that require low series power consumption and fast switching.
FDS6892A Features
7.5 A, 20 V
RDS(ON) = 18 mΩ @ VGS = 4.5 V
RDS(ON) = 24 mΩ @ VGS = 2.5 V
Low gate charge
High performance trench technology for extremely low RDS(ON)
High power and current handling capability
FDS6892A Applications
This product is general usage and suitable for many different applications.
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