FDS6875
- Mfr.Part #
- FDS6875
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- POWER FIELD-EFFECT TRANSISTOR, 6
- Stock
- 13,855
- In Stock :
- 13,855
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Arrays
- Terminal Form :
- Gull wing
- Drain Current-Max (Abs) (ID) :
- 6A
- FET Type :
- 2 P-Channel (Dual)
- Factory Lead Time :
- 10 Weeks
- Power Dissipation :
- 2W
- Operating Temperature :
- -55°C~150°C TJ
- Length :
- 5mm
- JESD-609 Code :
- e3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Mode :
- ENHANCEMENT MODE
- FET Feature :
- Logic Level Gate
- Continuous Drain Current (ID) :
- -6A
- Transistor Application :
- SWITCHING
- Weight :
- 187mg
- Mounting Type :
- Surface Mount
- Rds On (Max) @ Id, Vgs :
- 30m Ω @ 6A, 4.5V
- RoHS Status :
- ROHS3 Compliant
- Current - Continuous Drain (Id) @ 25°C :
- 6A
- Number of Terminations :
- 8
- Lead Free :
- Lead Free
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Rise Time :
- 15ns
- ECCN Code :
- EAR99
- Gate to Source Voltage (Vgs) :
- 8V
- Current Rating :
- -6A
- Power - Max :
- 900mW
- Radiation Hardening :
- No
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Voltage - Rated DC :
- -20V
- Turn On Delay Time :
- 8 ns
- Threshold Voltage :
- -800mV
- Element Configuration :
- Dual
- Drain to Source Breakdown Voltage :
- -20V
- Series :
- PowerTrench®
- Mount :
- Surface Mount
- Transistor Element Material :
- SILICON
- Input Capacitance (Ciss) (Max) @ Vds :
- 2250pF @ 10V
- Gate Charge (Qg) (Max) @ Vgs :
- 31nC @ 5V
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Width :
- 4mm
- Max Power Dissipation :
- 2W
- Height :
- 1.5mm
- REACH SVHC :
- No SVHC
- Number of Pins :
- 8
- Vgs(th) (Max) @ Id :
- 1.5V @ 250µA
- Drain to Source Voltage (Vdss) :
- 20V
- Number of Elements :
- 2
- Contact Plating :
- Tin
- Pbfree Code :
- yes
- Turn-Off Delay Time :
- 98 ns
- Packaging :
- Tape and Reel (TR)
- Resistance :
- 30mOhm
- Fall Time (Typ) :
- 35 ns
- Datasheets
- FDS6875

FDS6875 datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at
FDS6875 Description
The MOSFET specified by these P-channel 2.5v is Advanced using ON Semiconductor . The power trench process is tailor-made to minimize on-resistance while maintaining a low gate charge to achieve excellent switching performance.
These devices are ideal for portable electronic applications: load switching and power management, battery charging and protection circuits.
FDS6875 Features
-6A-20VR=0.03 @V=-4.5V
RDsiON)=0.040Ω @Vas=-2.5 V.
Low gate charge (23nC typical)
High performance trench technology for extremely low Rpsionr
High power and current handling capability.
FDS6875 Applications
portable electronic applications
load switching
power management
battery charging
protection circuits
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