FDS6875
- Mfr.Part #
- FDS6875
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- POWER FIELD-EFFECT TRANSISTOR, 6
- Stock
- 13,855
- In Stock :
- 13,855
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Arrays
- Rise Time :
- 15ns
- Fall Time (Typ) :
- 35 ns
- Turn-Off Delay Time :
- 98 ns
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Pbfree Code :
- yes
- Factory Lead Time :
- 10 Weeks
- Drain to Source Breakdown Voltage :
- -20V
- Length :
- 5mm
- REACH SVHC :
- No SVHC
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Number of Terminations :
- 8
- Width :
- 4mm
- Power Dissipation :
- 2W
- Element Configuration :
- Dual
- Mount :
- Surface Mount
- Rds On (Max) @ Id, Vgs :
- 30m Ω @ 6A, 4.5V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Application :
- SWITCHING
- Number of Elements :
- 2
- Current Rating :
- -6A
- Voltage - Rated DC :
- -20V
- Gate to Source Voltage (Vgs) :
- 8V
- Packaging :
- Tape and Reel (TR)
- Current - Continuous Drain (Id) @ 25°C :
- 6A
- Continuous Drain Current (ID) :
- -6A
- Weight :
- 187mg
- Drain Current-Max (Abs) (ID) :
- 6A
- Resistance :
- 30mOhm
- Threshold Voltage :
- -800mV
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- RoHS Status :
- ROHS3 Compliant
- Max Power Dissipation :
- 2W
- Gate Charge (Qg) (Max) @ Vgs :
- 31nC @ 5V
- Vgs(th) (Max) @ Id :
- 1.5V @ 250µA
- Operating Mode :
- ENHANCEMENT MODE
- FET Type :
- 2 P-Channel (Dual)
- ECCN Code :
- EAR99
- Input Capacitance (Ciss) (Max) @ Vds :
- 2250pF @ 10V
- Height :
- 1.5mm
- Drain to Source Voltage (Vdss) :
- 20V
- Operating Temperature :
- -55°C~150°C TJ
- Radiation Hardening :
- No
- Contact Plating :
- Tin
- Lead Free :
- Lead Free
- JESD-609 Code :
- e3
- Terminal Form :
- Gull wing
- Turn On Delay Time :
- 8 ns
- Transistor Element Material :
- SILICON
- Series :
- PowerTrench®
- Mounting Type :
- Surface Mount
- Number of Pins :
- 8
- FET Feature :
- Logic Level Gate
- Power - Max :
- 900mW
- Datasheets
- FDS6875
FDS6875 Documents

FDS6875 datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at
FDS6875 Description
The MOSFET specified by these P-channel 2.5v is Advanced using ON Semiconductor . The power trench process is tailor-made to minimize on-resistance while maintaining a low gate charge to achieve excellent switching performance.
These devices are ideal for portable electronic applications: load switching and power management, battery charging and protection circuits.
FDS6875 Features
-6A-20VR=0.03 @V=-4.5V
RDsiON)=0.040Ω @Vas=-2.5 V.
Low gate charge (23nC typical)
High performance trench technology for extremely low Rpsionr
High power and current handling capability.
FDS6875 Applications
portable electronic applications
load switching
power management
battery charging
protection circuits
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