FDS6875

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Power - Max :

900mW

Length :

5mm

Number of Pins :

8

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Operating Temperature :

-55°C~150°C TJ

Turn On Delay Time :

8 ns

FET Type :

2 P-Channel (Dual)

Pbfree Code :

yes

Drain to Source Breakdown Voltage :

-20V

Rds On (Max) @ Id, Vgs :

30m Ω @ 6A, 4.5V

Threshold Voltage :

-800mV

FET Feature :

Logic Level Gate

Transistor Element Material :

SILICON

Lead Free :

Lead Free

Operating Mode :

ENHANCEMENT MODE

Current - Continuous Drain (Id) @ 25°C :

6A

Series :

PowerTrench®

Mount :

Surface Mount

Radiation Hardening :

No

Current Rating :

-6A

Drain to Source Voltage (Vdss) :

20V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Gate Charge (Qg) (Max) @ Vgs :

31nC @ 5V

RoHS Status :

ROHS3 Compliant

Rise Time :

15ns

Power Dissipation :

2W

Continuous Drain Current (ID) :

-6A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Contact Plating :

Tin

Element Configuration :

Dual

Input Capacitance (Ciss) (Max) @ Vds :

2250pF @ 10V

Drain Current-Max (Abs) (ID) :

6A

Factory Lead Time :

10 Weeks

ECCN Code :

EAR99

Transistor Application :

SWITCHING

Gate to Source Voltage (Vgs) :

8V

Fall Time (Typ) :

35 ns

Height :

1.5mm

REACH SVHC :

No SVHC

Mounting Type :

Surface Mount

Resistance :

30mOhm

Packaging :

Tape and Reel (TR)

JESD-609 Code :

e3

Terminal Form :

Gull wing

Number of Terminations :

8

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Vgs(th) (Max) @ Id :

1.5V @ 250µA

Max Power Dissipation :

2W

Width :

4mm

Weight :

187mg

Number of Elements :

2

Turn-Off Delay Time :

98 ns

Voltage - Rated DC :

-20V