FDS6875

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Max Power Dissipation :

2W

Pbfree Code :

yes

Packaging :

Tape and Reel (TR)

Number of Elements :

2

ECCN Code :

EAR99

Drain to Source Voltage (Vdss) :

20V

REACH SVHC :

No SVHC

Drain Current-Max (Abs) (ID) :

6A

RoHS Status :

ROHS3 Compliant

Continuous Drain Current (ID) :

-6A

Mounting Type :

Surface Mount

Drain to Source Breakdown Voltage :

-20V

Weight :

187mg

Number of Pins :

8

Turn On Delay Time :

8 ns

Fall Time (Typ) :

35 ns

Factory Lead Time :

10 Weeks

Turn-Off Delay Time :

98 ns

Power Dissipation :

2W

Transistor Application :

SWITCHING

Input Capacitance (Ciss) (Max) @ Vds :

2250pF @ 10V

Lead Free :

Lead Free

Length :

5mm

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power - Max :

900mW

Voltage - Rated DC :

-20V

Number of Terminations :

8

Height :

1.5mm

Radiation Hardening :

No

FET Feature :

Logic Level Gate

Element Configuration :

Dual

Gate Charge (Qg) (Max) @ Vgs :

31nC @ 5V

Threshold Voltage :

-800mV

Terminal Form :

Gull wing

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Transistor Element Material :

SILICON

Rds On (Max) @ Id, Vgs :

30m Ω @ 6A, 4.5V

Rise Time :

15ns

Operating Temperature :

-55°C~150°C TJ

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

FET Type :

2 P-Channel (Dual)

Gate to Source Voltage (Vgs) :

8V

Series :

PowerTrench®

Current Rating :

-6A

JESD-609 Code :

e3

Contact Plating :

Tin

Operating Mode :

ENHANCEMENT MODE

Width :

4mm

Resistance :

30mOhm

Current - Continuous Drain (Id) @ 25°C :

6A

Mount :

Surface Mount

Vgs(th) (Max) @ Id :

1.5V @ 250µA