FDS6812A

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

RoHS Status :

ROHS3 Compliant

Drain Current-Max (Abs) (ID) :

6.7A

Current - Continuous Drain (Id) @ 25°C :

6.7A

DS Breakdown Voltage-Min :

20V

Power - Max :

900mW

Rds On (Max) @ Id, Vgs :

22m Ω @ 6.7A, 4.5V

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Terminal Finish :

MATTE TIN

Drain to Source Voltage (Vdss) :

20V

FET Feature :

Logic Level Gate

Surface Mount :

yes

Transistor Element Material :

SILICON

Vgs(th) (Max) @ Id :

1.5V @ 250µA

Operating Mode :

ENHANCEMENT MODE

Number of Terminations :

8

Input Capacitance (Ciss) (Max) @ Vds :

1082pF @ 10V

Drain-source On Resistance-Max :

0.22Ohm

Mounting Type :

Surface Mount

Peak Reflow Temperature (Cel) :

260

FET Type :

2 N-Channel (Dual)

JESD-30 Code :

R-PDSO-G8

Pbfree Code :

yes

Number of Elements :

2

Packaging :

Tape and Reel (TR)

Series :

PowerTrench®

Pin Count :

8

JESD-609 Code :

e3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature :

-55°C~150°C TJ

Terminal Form :

Gull wing

Gate Charge (Qg) (Max) @ Vgs :

19nC @ 4.5V

Qualification Status :

COMMERCIAL

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Transistor Application :

SWITCHING

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Pulsed Drain Current-Max (IDM) :

35A