FDS6676S
- Mfr.Part #
- FDS6676S
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- SMALL SIGNAL N-CHANNEL MOSFET
- Stock
- 9,386
- In Stock :
- 9,386
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Pin Count :
- 8
- DS Breakdown Voltage-Min :
- 30 V
- Package Shape :
- RECTANGULAR
- Package :
- Bulk
- Product Status :
- Active
- Vgs (Max) :
- ±16V
- Terminal Finish :
- MATTE TIN
- Power Dissipation (Max) :
- 1W (Ta)
- Terminal Position :
- Dual
- Operating Temperature :
- -55°C ~ 150°C (TJ)
- Polarity/Channel Type :
- N-Channel
- FET Feature :
- -
- Mounting Type :
- Surface Mount
- Manufacturer :
- Rochester Electronics LLC
- FET Type :
- N-Channel
- Series :
- PowerTrench®
- Drain-source On Resistance-Max :
- 0.0075 Ω
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Terminal Form :
- Gull wing
- Vgs(th) (Max) @ Id :
- 3V @ 1mA
- Qualification Status :
- COMMERCIAL
- Reach Compliance Code :
- Unknown
- Operating Mode :
- ENHANCEMENT MODE
- Number of Elements :
- 1
- Input Capacitance (Ciss) (Max) @ Vds :
- 4665 pF @ 15 V
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Transistor Element Material :
- SILICON
- Pbfree Code :
- yes
- Transistor Application :
- SWITCHING
- Surface Mount :
- yes
- JESD-609 Code :
- e3
- Rds On (Max) @ Id, Vgs :
- 7.5mOhm @ 14.5A, 10V
- Drain to Source Voltage (Vdss) :
- 30 V
- Drive Voltage (Max Rds On, Min Rds On) :
- 4.5V, 10V
- Supplier Device Package :
- 8-SOIC
- Number of Terminals :
- 8
- Technology :
- MOSFET (Metal Oxide)
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- JESD-30 Code :
- R-PDSO-G8
- Gate Charge (Qg) (Max) @ Vgs :
- 60 nC @ 5 V
- Peak Reflow Temperature (Cel) :
- 260
- Current - Continuous Drain (Id) @ 25°C :
- 14.5A (Ta)
- Datasheets
- FDS6676S

MOSFET (Metal Oxide) N-Channel 7.5mOhm @ 14.5A, 10V ±16V 4665 pF @ 15 V 60 nC @ 5 V 30 V 8-SOIC (0.154, 3.90mm Width)
FDS6676S Overview
A device's maximum input capacitance is 4665 pF @ 15 V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.For normal operation, maintain the DS breakdown voltage above 30 V.To operate this transistor, you need to apply a 30 V drain to source voltage (Vdss).
FDS6676S Features
a 30 V drain to source voltage (Vdss)
FDS6676S Applications
There are a lot of Fairchild Semiconductor
FDS6676S applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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