FDS6676AS

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Mfr.Part #
FDS6676AS
Manufacturer
onsemi
Package / Case
8-SOIC (0.154, 3.90mm Width)
Datasheet
Download
Description
MOSFET N-CH 30V 14.5A 8SOIC
Stock
12,593
In Stock :
12,593

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Gate to Source Voltage (Vgs) :
20V
Element Configuration :
Single
Drain to Source Breakdown Voltage :
30V
Transistor Element Material :
SILICON
Packaging :
Tape and Reel (TR)
Turn-Off Delay Time :
43 ns
Power Dissipation :
2.5W
FET Type :
N-Channel
Rise Time :
12ns
Pbfree Code :
yes
Number of Terminations :
8
Operating Temperature :
-55°C~150°C TJ
Terminal Position :
Dual
Operating Mode :
ENHANCEMENT MODE
Continuous Drain Current (ID) :
14.5A
Input Capacitance (Ciss) (Max) @ Vds :
2510pF @ 15V
Contact Plating :
Tin
Transistor Application :
SWITCHING
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Vgs(th) (Max) @ Id :
3V @ 1mA
Current - Continuous Drain (Id) @ 25°C :
14.5A Ta
Rds On (Max) @ Id, Vgs :
6m Ω @ 14.5A, 10V
Mounting Type :
Surface Mount
Number of Pins :
8
Drive Voltage (Max Rds On,Min Rds On) :
4.5V 10V
ECCN Code :
EAR99
Series :
PowerTrench®, SyncFET™
Resistance :
6mOhm
Lifecycle Status :
ACTIVE (Last Updated: 1 day ago)
Number of Elements :
1
Power Dissipation-Max :
2.5W Ta
Radiation Hardening :
No
Turn On Delay Time :
10 ns
Terminal Finish :
Nickel/Palladium/Gold (Ni/Pd/Au)
Height :
1.5mm
Width :
4mm
Mount :
Surface Mount
Fall Time (Typ) :
29 ns
REACH SVHC :
No SVHC
Weight :
130mg
Gate Charge (Qg) (Max) @ Vgs :
63nC @ 10V
RoHS Status :
ROHS3 Compliant
Length :
5mm
Vgs (Max) :
±20V
JESD-609 Code :
e4
Factory Lead Time :
18 Weeks
Threshold Voltage :
1.5V
Package / Case :
8-SOIC (0.154, 3.90mm Width)
Terminal Form :
Gull wing
Lead Free :
Lead Free
Introducing Transistors - FETs, MOSFETs - Single onsemi FDS6676AS from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:8, Operating Temperature:-55°C~150°C TJ, Mounting Type:Surface Mount, Number of Pins:8, Package / Case:8-SOIC (0.154, 3.90mm Width), FDS6676AS pinout, FDS6676AS datasheet PDF, FDS6676AS amp .Beyond Transistors - FETs, MOSFETs - Single onsemi FDS6676AS ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi FDS6676AS


N-Channel Tape & Reel (TR) 6m Ω @ 14.5A, 10V ±20V 2510pF @ 15V 63nC @ 10V 8-SOIC (0.154, 3.90mm Width)

FDS6676AS Description


In synchronous DC:DC power supply, the FDS6676AS is intended to replace a single SO-8 MOSFET and Schottky diode. With a low RDS(ON) and low gate charge, this 30V MOSFET is designed to maximize power conversion efficiency. Using ON Semiconductor's monolithic SyncFET technology, the FDS6676AS has an inbuilt Schottky diode.

FDS6676AS Features



? 14.5 A, 30 V. RDS(ON) max= 6.0 m? @ VGS = 10 V

RDS(ON) max= 7.25 m? @ VGS = 4.5 V

? Includes SyncFET Schottky body diode

? Low gate charge (45nC typical)

? High performance trench technology for extremely low RDS(ON) and fast switching

? High power and current handling capability

? RoHS compliant





FDS6676AS Applications



? DC/DC Converter

? Low Side Notebook

? Thermal Resistance

? Junction-to-Ambient Thermal Resistance

? Junction-to-Case
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