FDS6676AS
- Mfr.Part #
- FDS6676AS
- Manufacturer
- onsemi
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 14.5A 8SOIC
- Stock
- 12,593
- In Stock :
- 12,593
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Rise Time :
- 12ns
- Number of Pins :
- 8
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Vgs(th) (Max) @ Id :
- 3V @ 1mA
- Terminal Position :
- Dual
- Turn-Off Delay Time :
- 43 ns
- Pbfree Code :
- yes
- Mount :
- Surface Mount
- Power Dissipation-Max :
- 2.5W Ta
- Current - Continuous Drain (Id) @ 25°C :
- 14.5A Ta
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Series :
- PowerTrench®, SyncFET™
- Rds On (Max) @ Id, Vgs :
- 6m Ω @ 14.5A, 10V
- Length :
- 5mm
- Radiation Hardening :
- No
- Power Dissipation :
- 2.5W
- Terminal Form :
- Gull wing
- Weight :
- 130mg
- Gate to Source Voltage (Vgs) :
- 20V
- Resistance :
- 6mOhm
- Turn On Delay Time :
- 10 ns
- Threshold Voltage :
- 1.5V
- Gate Charge (Qg) (Max) @ Vgs :
- 63nC @ 10V
- Transistor Element Material :
- SILICON
- Input Capacitance (Ciss) (Max) @ Vds :
- 2510pF @ 15V
- Height :
- 1.5mm
- Terminal Finish :
- Nickel/Palladium/Gold (Ni/Pd/Au)
- Transistor Application :
- SWITCHING
- Continuous Drain Current (ID) :
- 14.5A
- Mounting Type :
- Surface Mount
- RoHS Status :
- ROHS3 Compliant
- Drain to Source Breakdown Voltage :
- 30V
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Fall Time (Typ) :
- 29 ns
- REACH SVHC :
- No SVHC
- JESD-609 Code :
- e4
- Number of Elements :
- 1
- Width :
- 4mm
- FET Type :
- N-Channel
- Lead Free :
- Lead Free
- Contact Plating :
- Tin
- Vgs (Max) :
- ±20V
- Packaging :
- Tape and Reel (TR)
- Element Configuration :
- Single
- Operating Temperature :
- -55°C~150°C TJ
- Number of Terminations :
- 8
- Operating Mode :
- ENHANCEMENT MODE
- Factory Lead Time :
- 18 Weeks
- ECCN Code :
- EAR99
- Datasheets
- FDS6676AS

N-Channel Tape & Reel (TR) 6m Ω @ 14.5A, 10V ±20V 2510pF @ 15V 63nC @ 10V 8-SOIC (0.154, 3.90mm Width)
In synchronous DC:DC power supply, the FDS6676AS is intended to replace a single SO-8 MOSFET and Schottky diode. With a low RDS(ON) and low gate charge, this 30V MOSFET is designed to maximize power conversion efficiency. Using ON Semiconductor's monolithic SyncFET technology, the FDS6676AS has an inbuilt Schottky diode.
FDS6676AS Features
? 14.5 A, 30 V. RDS(ON) max= 6.0 m? @ VGS = 10 V
RDS(ON) max= 7.25 m? @ VGS = 4.5 V
? Includes SyncFET Schottky body diode
? Low gate charge (45nC typical)
? High performance trench technology for extremely low RDS(ON) and fast switching
? High power and current handling capability
? RoHS compliant
FDS6676AS Applications
? DC/DC Converter
? Low Side Notebook
? Thermal Resistance
? Junction-to-Ambient Thermal Resistance
? Junction-to-Case
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