FDN5630

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Resistance :

100MOhm

JESD-609 Code :

e3

Nominal Vgs :

2.4 V

Vgs (Max) :

±20V

Radiation Hardening :

No

Turn-Off Delay Time :

15 ns

Lifecycle Status :

ACTIVE (Last Updated: 17 hours ago)

Min Breakdown Voltage :

60V

Series :

PowerTrench®

REACH SVHC :

No SVHC

Length :

2.92mm

Height :

1.22mm

Gate to Source Voltage (Vgs) :

20V

Vgs(th) (Max) @ Id :

3V @ 250µA

Number of Elements :

1

Transistor Element Material :

SILICON

Number of Terminations :

3

Number of Pins :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current Rating :

1.7A

Termination :

SMD/SMT

Published :

2000

Turn On Delay Time :

10 ns

Contact Plating :

Tin

Operating Temperature :

-55°C~150°C TJ

Power Dissipation-Max :

500mW Ta

Number of Channels :

1

Factory Lead Time :

8 Weeks

Mount :

Surface Mount

Threshold Voltage :

1V

Operating Mode :

ENHANCEMENT MODE

Dual Supply Voltage :

60V

Terminal Position :

Dual

Transistor Application :

SWITCHING

Fall Time (Typ) :

6 ns

Pbfree Code :

yes

Power Dissipation :

500mW

Max Junction Temperature (Tj) :

150°C

Current :

17A

Mounting Type :

Surface Mount

Element Configuration :

Single

Terminal Form :

Gull wing

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

RoHS Status :

ROHS3 Compliant

Rds On (Max) @ Id, Vgs :

100m Ω @ 1.7A, 10V

Gate Charge (Qg) (Max) @ Vgs :

10nC @ 10V

Continuous Drain Current (ID) :

1.7A

FET Type :

N-Channel

Width :

1.4mm

Rise Time :

6ns

Voltage - Rated DC :

60V

Lead Free :

Lead Free

Package / Case :

TO-236-3, SC-59, SOT-23-3

Input Capacitance (Ciss) (Max) @ Vds :

400pF @ 15V

Packaging :

Tape and Reel (TR)

Drain to Source Breakdown Voltage :

60V

Voltage :

60V

Current - Continuous Drain (Id) @ 25°C :

1.7A Ta

ECCN Code :

EAR99