FDN5630

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Mfr.Part #
FDN5630
Manufacturer
onsemi
Package / Case
TO-236-3, SC-59, SOT-23-3
Datasheet
Download
Description
MOSFET N-CH 60V 1.7A SUPERSOT3
Stock
3,419
In Stock :
3,419

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Mounting Type :
Surface Mount
Gate to Source Voltage (Vgs) :
20V
FET Type :
N-Channel
Min Breakdown Voltage :
60V
Current - Continuous Drain (Id) @ 25°C :
1.7A Ta
Termination :
SMD/SMT
RoHS Status :
ROHS3 Compliant
Series :
PowerTrench®
Operating Temperature :
-55°C~150°C TJ
Lifecycle Status :
ACTIVE (Last Updated: 17 hours ago)
Element Configuration :
Single
Rise Time :
6ns
Vgs(th) (Max) @ Id :
3V @ 250µA
Factory Lead Time :
8 Weeks
Power Dissipation :
500mW
Dual Supply Voltage :
60V
Transistor Element Material :
SILICON
Number of Channels :
1
Package / Case :
TO-236-3, SC-59, SOT-23-3
Packaging :
Tape and Reel (TR)
Turn On Delay Time :
10 ns
Terminal Form :
Gull wing
Published :
2000
Gate Charge (Qg) (Max) @ Vgs :
10nC @ 10V
Drain to Source Breakdown Voltage :
60V
Number of Elements :
1
Voltage :
60V
Turn-Off Delay Time :
15 ns
Current :
17A
Max Junction Temperature (Tj) :
150°C
Operating Mode :
ENHANCEMENT MODE
Number of Pins :
3
JESD-609 Code :
e3
Radiation Hardening :
No
Terminal Position :
Dual
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Vgs (Max) :
±20V
Rds On (Max) @ Id, Vgs :
100m Ω @ 1.7A, 10V
Continuous Drain Current (ID) :
1.7A
Length :
2.92mm
Mount :
Surface Mount
Drive Voltage (Max Rds On,Min Rds On) :
6V 10V
ECCN Code :
EAR99
Threshold Voltage :
1V
Resistance :
100MOhm
Lead Free :
Lead Free
REACH SVHC :
No SVHC
Fall Time (Typ) :
6 ns
Power Dissipation-Max :
500mW Ta
Height :
1.22mm
Nominal Vgs :
2.4 V
Pbfree Code :
yes
Current Rating :
1.7A
Transistor Application :
SWITCHING
Number of Terminations :
3
Width :
1.4mm
Contact Plating :
Tin
Input Capacitance (Ciss) (Max) @ Vds :
400pF @ 15V
Voltage - Rated DC :
60V
Datasheets
FDN5630
Introducing Transistors - FETs, MOSFETs - Single onsemi FDN5630 from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Surface Mount, Operating Temperature:-55°C~150°C TJ, Number of Channels:1, Package / Case:TO-236-3, SC-59, SOT-23-3, Voltage:60V, Number of Pins:3, Number of Terminations:3, FDN5630 pinout, FDN5630 datasheet PDF, FDN5630 amp .Beyond Transistors - FETs, MOSFETs - Single onsemi FDN5630 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi FDN5630


N-Channel Tape & Reel (TR) 100m Ω @ 1.7A, 10V ±20V 400pF @ 15V 10nC @ 10V TO-236-3, SC-59, SOT-23-3

Description


Explicitly designed to reduce on-state resistance and maintain a low gate charge for the best switching performance, the FDN5630 is a 60V N-channel PowerTrench? MOSFET. The newest medium voltage power MOSFET is an optimized power switch that combines a soft reverse recovery body diode, a small reverse recovery charge, and a small gate charge to provide quick switching for synchronous rectification in AC/DC power supply. It makes use of shielded-gate technology to maintain charge balance. These devices' FOM (figure of merit (QGxRDS(ON))) is 66 percent lower than that of earlier generations thanks to the use of this cutting-edge technology. Because it may reduce the unfavorable voltage spikes in synchronous rectification, the soft body diode performance of the new PowerTrench? MOSFET eliminates snubber circuits or replaces higher voltage ratings - MOSFET requires circuits. This product is all-purpose and appropriate for a wide range of uses.



Features


  • Low gate charge

  • High-speed switching

  • SuperSOTTM - 3 provides low RDS(ON) in SOT23 footprint

  • 1.7 A, 60 V. RDS(ON) = 0.100 ? @ VGS = 10 V

    RDS(ON) = 0.120 ? @ VGS = 6 V

  • Optimized for use in high frequency DC/DC converters



Applications


  • DC/DC converter

  • Motor drives

  • Automotive electronics

  • As switching devices in electronic control units

  • As power converters in modern electric vehicles


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