FDN5618P_G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Gate Charge (Qg) (Max) @ Vgs :

13.8nC @ 10V

Vgs (Max) :

±20V

Package / Case :

TO-236-3, SC-59, SOT-23-3

Power Dissipation-Max :

500mW Ta

Rds On (Max) @ Id, Vgs :

170m Ω @ 1.25A, 10V

Current - Continuous Drain (Id) @ 25°C :

1.25A Ta

Series :

PowerTrench®

Vgs(th) (Max) @ Id :

3V @ 250µA

FET Type :

P-Channel

Mounting Type :

Surface Mount

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Input Capacitance (Ciss) (Max) @ Vds :

430pF @ 30V

Moisture Sensitivity Level (MSL) :

Not Applicable

Packaging :

Bulk

Drain to Source Voltage (Vdss) :

60V

Operating Temperature :

-55°C~150°C TJ