FDN5618P

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Pbfree Code :

yes

Drain to Source Voltage (Vdss) :

60V

Transistor Application :

SWITCHING

RoHS Status :

ROHS3 Compliant

Fall Time (Typ) :

8 ns

Published :

2000

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Length :

2.92mm

Input Capacitance (Ciss) (Max) @ Vds :

430pF @ 30V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Radiation Hardening :

No

Gate Charge (Qg) (Max) @ Vgs :

13.8nC @ 10V

Mounting Type :

Surface Mount

Dual Supply Voltage :

-60V

ECCN Code :

EAR99

Factory Lead Time :

8 Weeks

Lifecycle Status :

ACTIVE (Last Updated: 15 hours ago)

Series :

PowerTrench®

Packaging :

Tape and Reel (TR)

Operating Temperature :

-55°C~150°C TJ

Voltage - Rated DC :

-60V

Rise Time :

8ns

Weight :

30mg

Turn On Delay Time :

6.5 ns

Number of Terminations :

3

Continuous Drain Current (ID) :

1.2A

Terminal Form :

Gull wing

Vgs(th) (Max) @ Id :

3V @ 250µA

Current - Continuous Drain (Id) @ 25°C :

1.25A Ta

Time@Peak Reflow Temperature-Max (s) :

30

Termination :

SMD/SMT

Nominal Vgs :

20 V

Number of Pins :

3

Number of Elements :

1

Turn-Off Delay Time :

16.5 ns

Current Rating :

-1.25A

Number of Channels :

1

Transistor Element Material :

SILICON

Rds On (Max) @ Id, Vgs :

170m Ω @ 1.25A, 10V

Drain to Source Breakdown Voltage :

-60V

Threshold Voltage :

-1.6V

Power Dissipation-Max :

500mW Ta

Contact Plating :

Tin

FET Type :

P-Channel

Resistance :

170mOhm

Width :

1.4mm

Terminal Position :

Dual

Mount :

Surface Mount

Power Dissipation :

500mW

Operating Mode :

ENHANCEMENT MODE

Max Junction Temperature (Tj) :

150°C

JESD-609 Code :

e3

Peak Reflow Temperature (Cel) :

260

Package / Case :

TO-236-3, SC-59, SOT-23-3

Gate to Source Voltage (Vgs) :

20V

REACH SVHC :

No SVHC

Vgs (Max) :

±20V

Element Configuration :

Single

Height :

1.22mm

Lead Free :

Lead Free