FDN5618P

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Max Junction Temperature (Tj) :

150°C

Current Rating :

-1.25A

Contact Plating :

Tin

FET Type :

P-Channel

Operating Mode :

ENHANCEMENT MODE

Turn-Off Delay Time :

16.5 ns

Series :

PowerTrench®

Input Capacitance (Ciss) (Max) @ Vds :

430pF @ 30V

Vgs(th) (Max) @ Id :

3V @ 250µA

Continuous Drain Current (ID) :

1.2A

Number of Elements :

1

Mounting Type :

Surface Mount

Gate to Source Voltage (Vgs) :

20V

Length :

2.92mm

Drain to Source Breakdown Voltage :

-60V

Nominal Vgs :

20 V

Turn On Delay Time :

6.5 ns

Factory Lead Time :

8 Weeks

Lead Free :

Lead Free

Current - Continuous Drain (Id) @ 25°C :

1.25A Ta

Power Dissipation :

500mW

Transistor Application :

SWITCHING

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

JESD-609 Code :

e3

Transistor Element Material :

SILICON

Terminal Position :

Dual

Width :

1.4mm

Number of Terminations :

3

Termination :

SMD/SMT

Peak Reflow Temperature (Cel) :

260

Gate Charge (Qg) (Max) @ Vgs :

13.8nC @ 10V

REACH SVHC :

No SVHC

Rds On (Max) @ Id, Vgs :

170m Ω @ 1.25A, 10V

Height :

1.22mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs (Max) :

±20V

Element Configuration :

Single

Time@Peak Reflow Temperature-Max (s) :

30

Dual Supply Voltage :

-60V

Number of Pins :

3

Pbfree Code :

yes

Packaging :

Tape and Reel (TR)

RoHS Status :

ROHS3 Compliant

Terminal Form :

Gull wing

Number of Channels :

1

Package / Case :

TO-236-3, SC-59, SOT-23-3

Threshold Voltage :

-1.6V

Mount :

Surface Mount

Drain to Source Voltage (Vdss) :

60V

Operating Temperature :

-55°C~150°C TJ

Resistance :

170mOhm

Published :

2000

Power Dissipation-Max :

500mW Ta

Lifecycle Status :

ACTIVE (Last Updated: 15 hours ago)

ECCN Code :

EAR99

Weight :

30mg

Radiation Hardening :

No

Fall Time (Typ) :

8 ns

Voltage - Rated DC :

-60V

Rise Time :

8ns