FDMT80080DC
- Mfr.Part #
- FDMT80080DC
- Manufacturer
- onsemi
- Package / Case
- 8-PowerVDFN
- Datasheet
- Download
- Description
- MOSFET N-CH 80V 36A/254A 8DUAL
- Stock
- 4,738
- In Stock :
- 4,738
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Lead Free :
- Lead Free
- Current - Continuous Drain (Id) @ 25°C :
- 36A Ta 254A Tc
- Mount :
- Surface Mount
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Gate Charge (Qg) (Max) @ Vgs :
- 273nC @ 10V
- Mounting Type :
- Surface Mount
- Series :
- Dual Cool™, PowerTrench®
- Peak Reflow Temperature (Cel) :
- 260
- Packaging :
- Tape and Reel (TR)
- Rds On (Max) @ Id, Vgs :
- 1.35m Ω @ 36A, 10V
- ECCN Code :
- EAR99
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Drain to Source Voltage (Vdss) :
- 80V
- Input Capacitance (Ciss) (Max) @ Vds :
- 20720pF @ 40V
- Element Configuration :
- Single
- RoHS Status :
- ROHS3 Compliant
- Reach Compliance Code :
- not_compliant
- Terminal Finish :
- Tin (Sn)
- Weight :
- 248.52072mg
- Factory Lead Time :
- 27 Weeks
- Package / Case :
- 8-PowerVDFN
- Lifecycle Status :
- ACTIVE (Last Updated: 5 days ago)
- JESD-609 Code :
- e3
- Number of Pins :
- 8
- Operating Temperature :
- -55°C~150°C TJ
- Pbfree Code :
- yes
- Continuous Drain Current (ID) :
- 254A
- FET Type :
- N-Channel
- Vgs (Max) :
- ±20V
- Drive Voltage (Max Rds On,Min Rds On) :
- 8V 10V
- Power Dissipation-Max :
- 3.2W Ta 156W Tc
- Datasheets
- FDMT80080DC

N-Channel Tape & Reel (TR) 1.35m Ω @ 36A, 10V ±20V 20720pF @ 40V 273nC @ 10V 80V 8-PowerVDFN
FDMT80080DC Description
Utilizing the cutting-edge PowerTrench? method, this N-Channel MOSFET was created. The lowest rDS(on) while maintaining outstanding switching performance has been achieved by combining advancements in both silicon and Dual CoolTM package technologies. This is made possible by the incredibly low Junction-to-Ambient thermal resistance.
FDMT80080DC Features
-
Max rDS(on) = 1.35 m|? at VGS = 10 V, ID = 36 A
-
Max rDS(on) = 1.82 m|? at VGS = 8 V, ID = 31 A
-
Advanced Package and Silicon combination for low rDS(on) and high efficiency
-
Next generation enhanced body diode technology, engineered for soft recovery
-
Low profile 8x8mm MLP package
-
MSL1 robust package design
-
100% UIL tested
-
RoHS Compliant
FDMT80080DC Applications
-
Oring FET / Load Switch
-
Synchronous Rectification
-
DC-DC Conversion
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