FDMT80060DC

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Mfr.Part #
FDMT80060DC
Manufacturer
onsemi
Package / Case
8-PowerVDFN
Datasheet
Download
Description
MOSFET N-CH 60V 43A/292A 8DUAL
Stock
7,925
In Stock :
7,925

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Number of Pins :
8
Drive Voltage (Max Rds On,Min Rds On) :
8V 10V
Package / Case :
8-PowerVDFN
Current - Continuous Drain (Id) @ 25°C :
43A Ta 292A Tc
Peak Reflow Temperature (Cel) :
260
Factory Lead Time :
20 Weeks
Power Dissipation-Max :
3.2W Ta 156W Tc
Vgs (Max) :
±20V
JESD-609 Code :
e3
Rise Time :
47ns
Turn-Off Delay Time :
66 ns
Reach Compliance Code :
not_compliant
Mounting Type :
Surface Mount
Gate to Source Voltage (Vgs) :
20V
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
FET Type :
N-Channel
Element Configuration :
Single
Operating Temperature :
-55°C~150°C TJ
Fall Time (Typ) :
19 ns
Series :
Dual Cool™, PowerTrench®
Packaging :
Tape and Reel (TR)
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
RoHS Status :
ROHS3 Compliant
Turn On Delay Time :
75 ns
Lifecycle Status :
ACTIVE (Last Updated: 5 days ago)
Rds On (Max) @ Id, Vgs :
1.1m Ω @ 43A, 10V
Mount :
Surface Mount
Vgs(th) (Max) @ Id :
4.5V @ 250μA
Gate Charge (Qg) (Max) @ Vgs :
238nC @ 10V
Continuous Drain Current (ID) :
292A
Terminal Finish :
Tin (Sn)
Pbfree Code :
yes
Drain to Source Voltage (Vdss) :
60V
ECCN Code :
EAR99
Input Capacitance (Ciss) (Max) @ Vds :
20170pF @ 30V
Weight :
248.52072mg
Datasheets
FDMT80060DC
Introducing Transistors - FETs, MOSFETs - Single onsemi FDMT80060DC from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:8, Package / Case:8-PowerVDFN, Mounting Type:Surface Mount, Operating Temperature:-55°C~150°C TJ, FDMT80060DC pinout, FDMT80060DC datasheet PDF, FDMT80060DC amp .Beyond Transistors - FETs, MOSFETs - Single onsemi FDMT80060DC ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi FDMT80060DC


N-Channel Tape & Reel (TR) 1.1m Ω @ 43A, 10V ±20V 20170pF @ 30V 238nC @ 10V 60V 8-PowerVDFN

FDMT80060DC Description


Fairchild Semiconductor's sophisticated PowerTrench? technology is used to make the FDMT80060DC. With extremely low Junction-to-Ambient thermal resistance, advances in both silicon and Dual CoolTM packaging technologies have been coupled to give the lowest rDS(on) while preserving good switching performance.



FDMT80060DC Features


At VGS = 10 V, ID = 43 A, the maximum rDs(on) is 1.1 mQ.


At Vgs = 8 V, Id = 37 A, MaxDs(on)= 1.3 mQ.


Combination of advanced package and silicon for low rDS(on) and high efficiency


Engineered for gentle r ecovery, next generation enhanced body diode technology


8x8 mm MLP package with low profile


MSL1 is a strong package design.


UIL was tested to the nth degree.


RoHS (Restriction of Hazardous Substances) Compliant



FDMT80060DC Applications


Load Switching / OringFET

Synchronous Rectification 

DC-DC Convergence


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