FDMT80060DC
- Mfr.Part #
- FDMT80060DC
- Manufacturer
- onsemi
- Package / Case
- 8-PowerVDFN
- Datasheet
- Download
- Description
- MOSFET N-CH 60V 43A/292A 8DUAL
- Stock
- 7,925
- In Stock :
- 7,925
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Number of Pins :
- 8
- Drive Voltage (Max Rds On,Min Rds On) :
- 8V 10V
- Package / Case :
- 8-PowerVDFN
- Current - Continuous Drain (Id) @ 25°C :
- 43A Ta 292A Tc
- Peak Reflow Temperature (Cel) :
- 260
- Factory Lead Time :
- 20 Weeks
- Power Dissipation-Max :
- 3.2W Ta 156W Tc
- Vgs (Max) :
- ±20V
- JESD-609 Code :
- e3
- Rise Time :
- 47ns
- Turn-Off Delay Time :
- 66 ns
- Reach Compliance Code :
- not_compliant
- Mounting Type :
- Surface Mount
- Gate to Source Voltage (Vgs) :
- 20V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- FET Type :
- N-Channel
- Element Configuration :
- Single
- Operating Temperature :
- -55°C~150°C TJ
- Fall Time (Typ) :
- 19 ns
- Series :
- Dual Cool™, PowerTrench®
- Packaging :
- Tape and Reel (TR)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- RoHS Status :
- ROHS3 Compliant
- Turn On Delay Time :
- 75 ns
- Lifecycle Status :
- ACTIVE (Last Updated: 5 days ago)
- Rds On (Max) @ Id, Vgs :
- 1.1m Ω @ 43A, 10V
- Mount :
- Surface Mount
- Vgs(th) (Max) @ Id :
- 4.5V @ 250μA
- Gate Charge (Qg) (Max) @ Vgs :
- 238nC @ 10V
- Continuous Drain Current (ID) :
- 292A
- Terminal Finish :
- Tin (Sn)
- Pbfree Code :
- yes
- Drain to Source Voltage (Vdss) :
- 60V
- ECCN Code :
- EAR99
- Input Capacitance (Ciss) (Max) @ Vds :
- 20170pF @ 30V
- Weight :
- 248.52072mg
- Datasheets
- FDMT80060DC

N-Channel Tape & Reel (TR) 1.1m Ω @ 43A, 10V ±20V 20170pF @ 30V 238nC @ 10V 60V 8-PowerVDFN
FDMT80060DC Description
Fairchild Semiconductor's sophisticated PowerTrench? technology is used to make the FDMT80060DC. With extremely low Junction-to-Ambient thermal resistance, advances in both silicon and Dual CoolTM packaging technologies have been coupled to give the lowest rDS(on) while preserving good switching performance.
FDMT80060DC Features
At VGS = 10 V, ID = 43 A, the maximum rDs(on) is 1.1 mQ.
At Vgs = 8 V, Id = 37 A, MaxDs(on)= 1.3 mQ.
Combination of advanced package and silicon for low rDS(on) and high efficiency
Engineered for gentle r ecovery, next generation enhanced body diode technology
8x8 mm MLP package with low profile
MSL1 is a strong package design.
UIL was tested to the nth degree.
RoHS (Restriction of Hazardous Substances) Compliant
FDMT80060DC Applications
Load Switching / OringFET
Synchronous Rectification
DC-DC Convergence
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