FDMT800120DC
- Mfr.Part #
- FDMT800120DC
- Manufacturer
- onsemi
- Package / Case
- 8-PowerVDFN
- Datasheet
- Download
- Description
- MOSFET N-CH 120V 20A 8DLCOOL88
- Stock
- 3,543
- In Stock :
- 3,543
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Package / Case :
- 8-PowerVDFN
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Rise Time :
- 18ns
- Drive Voltage (Max Rds On,Min Rds On) :
- 6V 10V
- Fall Time (Typ) :
- 9.5 ns
- Factory Lead Time :
- 20 Weeks
- Rds On (Max) @ Id, Vgs :
- 4.14m Ω @ 20A, 10V
- Peak Reflow Temperature (Cel) :
- 260
- Turn On Delay Time :
- 29 ns
- Gate to Source Voltage (Vgs) :
- 20V
- Terminal Finish :
- Tin (Sn)
- Number of Pins :
- 8
- Mount :
- Surface Mount
- FET Type :
- N-Channel
- Element Configuration :
- Single
- Operating Temperature :
- -55°C~150°C TJ
- Reach Compliance Code :
- not_compliant
- Pbfree Code :
- yes
- Continuous Drain Current (ID) :
- 129A
- Packaging :
- Tape and Reel (TR)
- Input Capacitance (Ciss) (Max) @ Vds :
- 7850pF @ 60V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Mounting Type :
- Surface Mount
- Lifecycle Status :
- ACTIVE (Last Updated: 5 days ago)
- JESD-609 Code :
- e3
- RoHS Status :
- ROHS3 Compliant
- Turn-Off Delay Time :
- 40 ns
- Power Dissipation-Max :
- 3.2W Ta 156W Tc
- ECCN Code :
- EAR99
- Weight :
- 248.52072mg
- Current - Continuous Drain (Id) @ 25°C :
- 20A Ta 129A Tc
- Drain to Source Voltage (Vdss) :
- 120V
- Vgs (Max) :
- ±20V
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Series :
- Dual Cool™, PowerTrench®
- Gate Charge (Qg) (Max) @ Vgs :
- 107nC @ 10V
- Datasheets
- FDMT800120DC

N-Channel Tape & Reel (TR) 4.14m Ω @ 20A, 10V ±20V 7850pF @ 60V 107nC @ 10V 120V 8-PowerVDFN
FDMT800120DC Description
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench? process. Advancements in both silicon and Dual CoolTM package technologies have been combined to offer the lowest RDS(on) while maintaining excellent switching performance by extremely low Junction-to-Ambient thermal resistance.
FDMT800120DC Features
Max rDS(on) = 4.2 m? at VGS = 10 V, ID = 20 A
Max rDS(on) = 6.4 m? at VGS = 6 V, ID = 16 A
Advanced Package and Silicon combination for low rDS(on) and high efficiency
Next-generation enhanced body diode technology, engineered for soft recovery
Low profile 8x8mm MLP package
MSL1 robust package design
100% UIL tested
RoHS Compliant
FDMT800120DC Applications
OringFET / Load Switching
Synchronous Rectification
DC-DC Conversion
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