FDMT800120DC

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Mfr.Part #
FDMT800120DC
Manufacturer
onsemi
Package / Case
8-PowerVDFN
Datasheet
Download
Description
MOSFET N-CH 120V 20A 8DLCOOL88
Stock
3,543
In Stock :
3,543

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Peak Reflow Temperature (Cel) :
260
Lifecycle Status :
ACTIVE (Last Updated: 5 days ago)
Rds On (Max) @ Id, Vgs :
4.14m Ω @ 20A, 10V
Packaging :
Tape and Reel (TR)
Series :
Dual Cool™, PowerTrench®
Vgs (Max) :
±20V
Element Configuration :
Single
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Package / Case :
8-PowerVDFN
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Gate Charge (Qg) (Max) @ Vgs :
107nC @ 10V
Weight :
248.52072mg
Operating Temperature :
-55°C~150°C TJ
Continuous Drain Current (ID) :
129A
FET Type :
N-Channel
Mount :
Surface Mount
Drive Voltage (Max Rds On,Min Rds On) :
6V 10V
Rise Time :
18ns
Factory Lead Time :
20 Weeks
Current - Continuous Drain (Id) @ 25°C :
20A Ta 129A Tc
Gate to Source Voltage (Vgs) :
20V
Fall Time (Typ) :
9.5 ns
Number of Pins :
8
RoHS Status :
ROHS3 Compliant
Input Capacitance (Ciss) (Max) @ Vds :
7850pF @ 60V
Vgs(th) (Max) @ Id :
4V @ 250µA
Reach Compliance Code :
not_compliant
Turn-Off Delay Time :
40 ns
Power Dissipation-Max :
3.2W Ta 156W Tc
Drain to Source Voltage (Vdss) :
120V
JESD-609 Code :
e3
Terminal Finish :
Tin (Sn)
Mounting Type :
Surface Mount
ECCN Code :
EAR99
Pbfree Code :
yes
Turn On Delay Time :
29 ns
Introducing Transistors - FETs, MOSFETs - Single onsemi FDMT800120DC from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:8-PowerVDFN, Operating Temperature:-55°C~150°C TJ, Number of Pins:8, Mounting Type:Surface Mount, FDMT800120DC pinout, FDMT800120DC datasheet PDF, FDMT800120DC amp .Beyond Transistors - FETs, MOSFETs - Single onsemi FDMT800120DC ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi FDMT800120DC


N-Channel Tape & Reel (TR) 4.14m Ω @ 20A, 10V ±20V 7850pF @ 60V 107nC @ 10V 120V 8-PowerVDFN

FDMT800120DC Description

This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench? process. Advancements in both silicon and Dual CoolTM package technologies have been combined to offer the lowest RDS(on) while maintaining excellent switching performance by extremely low Junction-to-Ambient thermal resistance.



FDMT800120DC Features

Max rDS(on) = 4.2 m? at VGS = 10 V, ID = 20 A

Max rDS(on) = 6.4 m? at VGS = 6 V, ID = 16 A

Advanced Package and Silicon combination for low rDS(on) and high efficiency

Next-generation enhanced body diode technology, engineered for soft recovery

Low profile 8x8mm MLP package

MSL1 robust package design

100% UIL tested

RoHS Compliant



FDMT800120DC Applications

OringFET / Load Switching

Synchronous Rectification

DC-DC Conversion



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