FDMT800120DC

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Mfr.Part #
FDMT800120DC
Manufacturer
onsemi
Package / Case
8-PowerVDFN
Datasheet
Download
Description
MOSFET N-CH 120V 20A 8DLCOOL88
Stock
3,543
In Stock :
3,543

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Package / Case :
8-PowerVDFN
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Rise Time :
18ns
Drive Voltage (Max Rds On,Min Rds On) :
6V 10V
Fall Time (Typ) :
9.5 ns
Factory Lead Time :
20 Weeks
Rds On (Max) @ Id, Vgs :
4.14m Ω @ 20A, 10V
Peak Reflow Temperature (Cel) :
260
Turn On Delay Time :
29 ns
Gate to Source Voltage (Vgs) :
20V
Terminal Finish :
Tin (Sn)
Number of Pins :
8
Mount :
Surface Mount
FET Type :
N-Channel
Element Configuration :
Single
Operating Temperature :
-55°C~150°C TJ
Reach Compliance Code :
not_compliant
Pbfree Code :
yes
Continuous Drain Current (ID) :
129A
Packaging :
Tape and Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds :
7850pF @ 60V
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Mounting Type :
Surface Mount
Lifecycle Status :
ACTIVE (Last Updated: 5 days ago)
JESD-609 Code :
e3
RoHS Status :
ROHS3 Compliant
Turn-Off Delay Time :
40 ns
Power Dissipation-Max :
3.2W Ta 156W Tc
ECCN Code :
EAR99
Weight :
248.52072mg
Current - Continuous Drain (Id) @ 25°C :
20A Ta 129A Tc
Drain to Source Voltage (Vdss) :
120V
Vgs (Max) :
±20V
Vgs(th) (Max) @ Id :
4V @ 250µA
Series :
Dual Cool™, PowerTrench®
Gate Charge (Qg) (Max) @ Vgs :
107nC @ 10V
Datasheets
FDMT800120DC
Introducing Transistors - FETs, MOSFETs - Single onsemi FDMT800120DC from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:8-PowerVDFN, Number of Pins:8, Operating Temperature:-55°C~150°C TJ, Mounting Type:Surface Mount, FDMT800120DC pinout, FDMT800120DC datasheet PDF, FDMT800120DC amp .Beyond Transistors - FETs, MOSFETs - Single onsemi FDMT800120DC ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi FDMT800120DC


N-Channel Tape & Reel (TR) 4.14m Ω @ 20A, 10V ±20V 7850pF @ 60V 107nC @ 10V 120V 8-PowerVDFN

FDMT800120DC Description

This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench? process. Advancements in both silicon and Dual CoolTM package technologies have been combined to offer the lowest RDS(on) while maintaining excellent switching performance by extremely low Junction-to-Ambient thermal resistance.



FDMT800120DC Features

Max rDS(on) = 4.2 m? at VGS = 10 V, ID = 20 A

Max rDS(on) = 6.4 m? at VGS = 6 V, ID = 16 A

Advanced Package and Silicon combination for low rDS(on) and high efficiency

Next-generation enhanced body diode technology, engineered for soft recovery

Low profile 8x8mm MLP package

MSL1 robust package design

100% UIL tested

RoHS Compliant



FDMT800120DC Applications

OringFET / Load Switching

Synchronous Rectification

DC-DC Conversion



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