FDMS3600AS

Manufacturer :

Fairchild Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Arrays

FET Feature :

Logic Level Gate

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Number of Pins :

8

Turn On Delay Time :

13 ns

Operating Temperature :

-55°C~150°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Input Capacitance (Ciss) (Max) @ Vds :

1770pF @ 13V

Factory Lead Time :

18 Weeks

RoHS Status :

ROHS3 Compliant

Drain to Source Voltage (Vdss) :

25V

Number of Elements :

2

Max Power Dissipation :

2.5W

Weight :

90mg

Drain Current-Max (Abs) (ID) :

15A

Mounting Type :

Surface Mount

Terminal Form :

NO LEAD

Series :

PowerTrench®

Mount :

Surface Mount

Number of Channels :

2

Current - Continuous Drain (Id) @ 25°C :

15A 30A

Vgs(th) (Max) @ Id :

2.7V @ 250μA

Number of Terminations :

6

Drain-source On Resistance-Max :

0.0056Ohm

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Continuous Drain Current (ID) :

30A

Rds On (Max) @ Id, Vgs :

5.6m Ω @ 15A, 10V

Fall Time (Typ) :

3.9 ns

JESD-30 Code :

R-PDSO-N6

Turn-Off Delay Time :

38 ns

Case Connection :

DRAIN SOURCE

ECCN Code :

EAR99

Operating Mode :

ENHANCEMENT MODE

Transistor Application :

SWITCHING

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Reach Compliance Code :

not_compliant

Pbfree Code :

yes

Feedback Cap-Max (Crss) :

90 pF

Gate to Source Voltage (Vgs) :

20V

Package / Case :

8-PowerTDFN

JESD-609 Code :

e3

Packaging :

Tape and Reel (TR)

Rise Time :

5.3ns

Power - Max :

2.2W 2.5W

Gate Charge (Qg) (Max) @ Vgs :

27nC @ 10V

FET Type :

2 N-Channel (Dual) Asymmetrical

Transistor Element Material :

SILICON

Terminal Finish :

Tin (Sn)

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED