FDMC8882
- Mfr.Part #
- FDMC8882
- Manufacturer
- onsemi
- Package / Case
- 8-PowerWDFN
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 10.5A/16A 8MLP
- Stock
- 5,070
- In Stock :
- 5,070
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Case Connection :
- DRAIN
- Additional Feature :
- ULTRA-LOW RESISTANCE
- Transistor Element Material :
- SILICON
- Nominal Vgs :
- 1.9 V
- Continuous Drain Current (ID) :
- 10.5A
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Length :
- 3.3mm
- Input Capacitance (Ciss) (Max) @ Vds :
- 945pF @ 15V
- Packaging :
- Tape and Reel (TR)
- Threshold Voltage :
- 1.9V
- Rds On (Max) @ Id, Vgs :
- 14.3m Ω @ 10.5A, 10V
- Turn On Delay Time :
- 7 ns
- Drain Current-Max (Abs) (ID) :
- 34A
- Package / Case :
- 8-PowerWDFN
- Gate Charge (Qg) (Max) @ Vgs :
- 20nC @ 10V
- Power Dissipation-Max :
- 2.3W Ta 18W Tc
- Resistance :
- 14.3mOhm
- Weight :
- 200mg
- Lead Free :
- Lead Free
- Rise Time :
- 3ns
- Factory Lead Time :
- 23 Weeks
- Power Dissipation :
- 18W
- Operating Mode :
- ENHANCEMENT MODE
- Pbfree Code :
- yes
- Height :
- 750μm
- Fall Time (Typ) :
- 2 ns
- Operating Temperature :
- -55°C~150°C TJ
- Mounting Type :
- Surface Mount
- Terminal Position :
- Dual
- Mount :
- Surface Mount
- Vgs(th) (Max) @ Id :
- 2.5V @ 250μA
- JESD-30 Code :
- S-PDSO-N5
- Number of Pins :
- 8
- Number of Elements :
- 1
- Drain to Source Breakdown Voltage :
- 30V
- Number of Terminations :
- 5
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current - Continuous Drain (Id) @ 25°C :
- 10.5A Ta 16A Tc
- FET Type :
- N-Channel
- REACH SVHC :
- No SVHC
- Width :
- 3.3mm
- Radiation Hardening :
- No
- JESD-609 Code :
- e4
- Element Configuration :
- Single
- Contact Plating :
- Gold
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- RoHS Status :
- ROHS3 Compliant
- Gate to Source Voltage (Vgs) :
- 20V
- Turn-Off Delay Time :
- 17 ns
- Transistor Application :
- SWITCHING
- Series :
- PowerTrench®
- ECCN Code :
- EAR99
- Pulsed Drain Current-Max (IDM) :
- 40A
- Vgs (Max) :
- ±20V
- Datasheets
- FDMC8882
FDMC8882 Documents

N-Channel Tape & Reel (TR) 14.3m Ω @ 10.5A, 10V ±20V 945pF @ 15V 20nC @ 10V 8-PowerWDFN
FDMC8882 Description
FDMC8882 N-Channel MOSFET is designed specifically for battery charge or loads switching in cellular handsets and other applications. FDMC8882 MOSFET features low on-state resistance. FDMC8882 ON Semiconductor enables better performance in the application and is used in Power Management and load switching applications, for instance, Notebook Computers and Portable Battery Packs.
FDMC8882 Features
Antimony oxides
Improve system efficiency
Low profile
RoHS Compliant
Free from halogenated
FDMC8882 Applications
Power Management
Load switching applications
Notebook Computers
Portable Battery Packs
Inverter
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