FDMC8882

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Input Capacitance (Ciss) (Max) @ Vds :

945pF @ 15V

Turn On Delay Time :

7 ns

JESD-609 Code :

e4

Power Dissipation :

18W

ECCN Code :

EAR99

Case Connection :

DRAIN

Continuous Drain Current (ID) :

10.5A

Rds On (Max) @ Id, Vgs :

14.3m Ω @ 10.5A, 10V

Current - Continuous Drain (Id) @ 25°C :

10.5A Ta 16A Tc

Length :

3.3mm

Operating Temperature :

-55°C~150°C TJ

Nominal Vgs :

1.9 V

Resistance :

14.3mOhm

Packaging :

Tape and Reel (TR)

Width :

3.3mm

Mount :

Surface Mount

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Transistor Application :

SWITCHING

Drain Current-Max (Abs) (ID) :

34A

Fall Time (Typ) :

2 ns

Number of Pins :

8

Drain to Source Breakdown Voltage :

30V

Lead Free :

Lead Free

Contact Plating :

Gold

Pbfree Code :

yes

Power Dissipation-Max :

2.3W Ta 18W Tc

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs (Max) :

±20V

Height :

750μm

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Gate Charge (Qg) (Max) @ Vgs :

20nC @ 10V

Mounting Type :

Surface Mount

Package / Case :

8-PowerWDFN

RoHS Status :

ROHS3 Compliant

Series :

PowerTrench®

Number of Terminations :

5

Number of Elements :

1

Rise Time :

3ns

Turn-Off Delay Time :

17 ns

FET Type :

N-Channel

Operating Mode :

ENHANCEMENT MODE

Element Configuration :

Single

Weight :

200mg

Vgs(th) (Max) @ Id :

2.5V @ 250μA

JESD-30 Code :

S-PDSO-N5

Factory Lead Time :

23 Weeks

Transistor Element Material :

SILICON

REACH SVHC :

No SVHC

Radiation Hardening :

No

Additional Feature :

ULTRA-LOW RESISTANCE

Pulsed Drain Current-Max (IDM) :

40A

Terminal Position :

Dual

Threshold Voltage :

1.9V

Gate to Source Voltage (Vgs) :

20V