FDMC8882

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Radiation Hardening :

No

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Additional Feature :

ULTRA-LOW RESISTANCE

Transistor Application :

SWITCHING

Threshold Voltage :

1.9V

Rise Time :

3ns

ECCN Code :

EAR99

Power Dissipation :

18W

Vgs (Max) :

±20V

Factory Lead Time :

23 Weeks

Fall Time (Typ) :

2 ns

Case Connection :

DRAIN

Gate Charge (Qg) (Max) @ Vgs :

20nC @ 10V

JESD-609 Code :

e4

Gate to Source Voltage (Vgs) :

20V

Power Dissipation-Max :

2.3W Ta 18W Tc

Resistance :

14.3mOhm

Pbfree Code :

yes

Element Configuration :

Single

Turn On Delay Time :

7 ns

FET Type :

N-Channel

Operating Temperature :

-55°C~150°C TJ

Number of Elements :

1

Nominal Vgs :

1.9 V

Mount :

Surface Mount

Continuous Drain Current (ID) :

10.5A

Height :

750μm

Mounting Type :

Surface Mount

Drain to Source Breakdown Voltage :

30V

Width :

3.3mm

Rds On (Max) @ Id, Vgs :

14.3m Ω @ 10.5A, 10V

Series :

PowerTrench®

Length :

3.3mm

Operating Mode :

ENHANCEMENT MODE

REACH SVHC :

No SVHC

Transistor Element Material :

SILICON

Drain Current-Max (Abs) (ID) :

34A

Weight :

200mg

Input Capacitance (Ciss) (Max) @ Vds :

945pF @ 15V

Current - Continuous Drain (Id) @ 25°C :

10.5A Ta 16A Tc

Lead Free :

Lead Free

Terminal Position :

Dual

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Vgs(th) (Max) @ Id :

2.5V @ 250μA

JESD-30 Code :

S-PDSO-N5

Number of Pins :

8

Packaging :

Tape and Reel (TR)

Contact Plating :

Gold

Turn-Off Delay Time :

17 ns

Pulsed Drain Current-Max (IDM) :

40A

Package / Case :

8-PowerWDFN

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

ROHS3 Compliant

Number of Terminations :

5