FDMC8878
- Mfr.Part #
- FDMC8878
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- 8-PowerWDFN
- Datasheet
- Download
- Description
- POWER FIELD-EFFECT TRANSISTOR, 9
- Stock
- 31,095
- In Stock :
- 31,095
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Gate Charge (Qg) (Max) @ Vgs :
- 26nC @ 10V
- Contact Plating :
- Gold
- Gate to Source Voltage (Vgs) :
- 20V
- Packaging :
- Tape and Reel (TR)
- ECCN Code :
- EAR99
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- Resistance :
- 14mOhm
- Number of Pins :
- 8
- Nominal Vgs :
- 1.7 V
- Current - Continuous Drain (Id) @ 25°C :
- 9.6A Ta 16.5A Tc
- Mount :
- Surface Mount
- REACH SVHC :
- No SVHC
- Termination :
- SMD/SMT
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Height :
- 950μm
- Input Capacitance (Ciss) (Max) @ Vds :
- 1230pF @ 15V
- JESD-609 Code :
- e4
- Rds On (Max) @ Id, Vgs :
- 14m Ω @ 9.6A, 10V
- Dual Supply Voltage :
- 30V
- Number of Terminations :
- 5
- Lead Free :
- Lead Free
- Transistor Application :
- SWITCHING
- Terminal Position :
- Dual
- Case Connection :
- DRAIN
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Series :
- PowerTrench®
- Published :
- 2006
- Weight :
- 180mg
- Width :
- 3mm
- Pulsed Drain Current-Max (IDM) :
- 60A
- Turn On Delay Time :
- 8 ns
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Rise Time :
- 4ns
- Element Configuration :
- Single
- Fall Time (Typ) :
- 3 ns
- Turn-Off Delay Time :
- 20 ns
- Factory Lead Time :
- 23 Weeks
- Transistor Element Material :
- SILICON
- Power Dissipation :
- 2.1W
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Threshold Voltage :
- 1.7V
- Continuous Drain Current (ID) :
- 9.6A
- Qualification Status :
- Not Qualified
- Package / Case :
- 8-PowerWDFN
- Mounting Type :
- Surface Mount
- Operating Temperature :
- -55°C~150°C TJ
- FET Type :
- N-Channel
- Operating Mode :
- ENHANCEMENT MODE
- JESD-30 Code :
- S-PDSO-N5
- RoHS Status :
- ROHS3 Compliant
- Terminal Form :
- NO LEAD
- Length :
- 3mm
- Vgs (Max) :
- ±20V
- Power Dissipation-Max :
- 2.1W Ta 31W Tc
- Number of Elements :
- 1
- Pbfree Code :
- yes
- Drain to Source Breakdown Voltage :
- 30V
- Datasheets
- FDMC8878

N-Channel Tape & Reel (TR) 14m Ω @ 9.6A, 10V ±20V 1230pF @ 15V 26nC @ 10V 8-PowerWDFN
FDMC8878 Description
FDMC8878 is a 30v N-Channel POWERTRENCH? MOSFET. This N?Channel MOSFET FDMC8878 is a rugged gate version of ON Semiconductor’s advanced PowerTrench process. The onsemi FDMC8878 has been optimized for power management applications. The Operating and Storage Temperature Range is between -55 and 150℃. And the Transistor FDMC8878 is in the WDFN-8 package with 31W power dissipation.
FDMC8878 Features
-
RDS(on) = 14 m (Max.) @ VGS = 10 V, ID = 9.6 A
-
RDS(on) = 17 m (Max.) @ VGS = 4.5 V, ID = 8.7 A
-
Low Profile ? 0.8 mm Max in MLP 3.3 x 3.3
-
Pb?Free and are RoHS Compliant
FDMC8878 Applications
-
Cellular phones
-
Laptop computers
-
Photovoltaic systems
-
Wind turbines
-
Shunt voltage regulator and the series voltage regulator
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