FDMC8878

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs (Max) :

±20V

Factory Lead Time :

23 Weeks

Input Capacitance (Ciss) (Max) @ Vds :

1230pF @ 15V

Fall Time (Typ) :

3 ns

Gate Charge (Qg) (Max) @ Vgs :

26nC @ 10V

Lead Free :

Lead Free

Threshold Voltage :

1.7V

JESD-609 Code :

e4

Pbfree Code :

yes

Operating Mode :

ENHANCEMENT MODE

FET Type :

N-Channel

Packaging :

Tape and Reel (TR)

Height :

950μm

Rise Time :

4ns

Package / Case :

8-PowerWDFN

Nominal Vgs :

1.7 V

Qualification Status :

Not Qualified

Rds On (Max) @ Id, Vgs :

14m Ω @ 9.6A, 10V

Series :

PowerTrench®

Current - Continuous Drain (Id) @ 25°C :

9.6A Ta 16.5A Tc

Turn On Delay Time :

8 ns

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Element Configuration :

Single

JESD-30 Code :

S-PDSO-N5

Drain to Source Breakdown Voltage :

30V

Transistor Element Material :

SILICON

Number of Elements :

1

Contact Plating :

Gold

Case Connection :

DRAIN

Operating Temperature :

-55°C~150°C TJ

Pulsed Drain Current-Max (IDM) :

60A

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Length :

3mm

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Power Dissipation-Max :

2.1W Ta 31W Tc

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Power Dissipation :

2.1W

Mounting Type :

Surface Mount

Vgs(th) (Max) @ Id :

3V @ 250µA

Transistor Application :

SWITCHING

Turn-Off Delay Time :

20 ns

Width :

3mm

Terminal Position :

Dual

Number of Terminations :

5

Terminal Form :

NO LEAD

ECCN Code :

EAR99

Published :

2006

Gate to Source Voltage (Vgs) :

20V

RoHS Status :

ROHS3 Compliant

Resistance :

14mOhm

Mount :

Surface Mount

Continuous Drain Current (ID) :

9.6A

Number of Pins :

8

REACH SVHC :

No SVHC

Dual Supply Voltage :

30V

Termination :

SMD/SMT

Weight :

180mg