FDMC86570LET60
- Mfr.Part #
- FDMC86570LET60
- Manufacturer
- onsemi
- Package / Case
- 8-PowerWDFN
- Datasheet
- Download
- Description
- MOSFET N-CH 60V 18A/87A POWER33
- Stock
- 10,598
- In Stock :
- 10,598
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vgs (Max) :
- ±20V
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- Mount :
- Surface Mount
- RoHS Status :
- ROHS3 Compliant
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Turn On Delay Time :
- 19 ns
- Package / Case :
- 8-PowerWDFN
- Height :
- 800μm
- Operating Temperature :
- -55°C~175°C TJ
- Packaging :
- Tape and Reel (TR)
- Terminal Finish :
- Tin (Sn)
- Rds On (Max) @ Id, Vgs :
- 4.3m Ω @ 18A, 10V
- Current - Continuous Drain (Id) @ 25°C :
- 18A Ta 87A Tc
- Mounting Type :
- Surface Mount
- Rise Time :
- 6.2ns
- Number of Pins :
- 8
- Series :
- PowerTrench®
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Lead Free :
- Lead Free
- Pbfree Code :
- yes
- Peak Reflow Temperature (Cel) :
- 260
- Input Capacitance (Ciss) (Max) @ Vds :
- 4790pF @ 30V
- Reach Compliance Code :
- not_compliant
- JESD-609 Code :
- e3
- Power Dissipation-Max :
- 2.8W Ta 65W Tc
- Factory Lead Time :
- 10 Weeks
- Power Dissipation :
- 2.8W
- Turn-Off Delay Time :
- 38 ns
- Weight :
- 152.7mg
- Number of Channels :
- 1
- ECCN Code :
- EAR99
- Fall Time (Typ) :
- 3.9 ns
- Drain to Source Breakdown Voltage :
- 60V
- Gate to Source Voltage (Vgs) :
- 20V
- Element Configuration :
- Single
- Max Junction Temperature (Tj) :
- 175°C
- Continuous Drain Current (ID) :
- 18A
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Gate Charge (Qg) (Max) @ Vgs :
- 88nC @ 10V
- FET Type :
- N-Channel
- Datasheets
- FDMC86570LET60

N-Channel Tape & Reel (TR) 4.3m Ω @ 18A, 10V ±20V 4790pF @ 30V 88nC @ 10V 8-PowerWDFN
FDMC86570LET60 Overview
The maximum input capacitance of this device is 4790pF @ 30V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 18A.When VGS=60V, and ID flows to VDS at 60VVDS, the drain-source breakdown voltage is 60V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 38 ns.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 19 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.Using drive voltage (4.5V 10V), this device helps reduce its power consumption.
FDMC86570LET60 Features
a continuous drain current (ID) of 18A
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 38 ns
FDMC86570LET60 Applications
There are a lot of ON Semiconductor
FDMC86570LET60 applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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