FDMC86570L

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Mfr.Part #
FDMC86570L
Manufacturer
onsemi
Package / Case
8-PowerWDFN
Datasheet
Download
Description
MOSFET N-CH 60V 18A/56A POWER33
Stock
17,601
In Stock :
17,601

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Operating Temperature :
-55°C~150°C TJ
JEDEC-95 Code :
MO-240BA
Power Dissipation-Max :
2.3W Ta 54W Tc
Input Capacitance (Ciss) (Max) @ Vds :
6705pF @ 30V
Series :
PowerTrench®
Avalanche Energy Rating (Eas) :
253 mJ
Packaging :
Tape and Reel (TR)
Package / Case :
8-PowerWDFN
Fall Time (Typ) :
10 ns
FET Type :
N-Channel
Terminal Position :
Dual
Threshold Voltage :
1.8V
JESD-30 Code :
S-PDSO-N5
Lifecycle Status :
ACTIVE (Last Updated: 1 week ago)
RoHS Status :
ROHS3 Compliant
Vgs (Max) :
±20V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
ECCN Code :
EAR99
Number of Channels :
1
Max Junction Temperature (Tj) :
150°C
Pulsed Drain Current-Max (IDM) :
200A
Number of Terminations :
5
Drive Voltage (Max Rds On,Min Rds On) :
4.5V 10V
Terminal Finish :
Tin (Sn)
Number of Pins :
8
Rds On (Max) @ Id, Vgs :
4.3m Ω @ 18A, 10V
Length :
3.4mm
Drain to Source Breakdown Voltage :
60V
Number of Elements :
1
Rise Time :
12ns
Turn-Off Delay Time :
38 ns
Turn On Delay Time :
19 ns
Gate to Source Voltage (Vgs) :
20V
Gate Charge (Qg) (Max) @ Vgs :
88nC @ 10V
Mount :
Surface Mount
Drain-source On Resistance-Max :
0.0043Ohm
Radiation Hardening :
No
Transistor Application :
SWITCHING
JESD-609 Code :
e3
Current - Continuous Drain (Id) @ 25°C :
18A Ta 56A Tc
Drain Current-Max (Abs) (ID) :
56A
Mounting Type :
Surface Mount
Width :
3.4mm
Case Connection :
DRAIN
Element Configuration :
Single
Transistor Element Material :
SILICON
Height :
800μm
Pbfree Code :
yes
Weight :
152.7mg
Operating Mode :
ENHANCEMENT MODE
Continuous Drain Current (ID) :
18A
Power Dissipation :
2.3W
Vgs(th) (Max) @ Id :
3V @ 250µA
Factory Lead Time :
20 Weeks
Datasheets
FDMC86570L
Introducing Transistors - FETs, MOSFETs - Single onsemi FDMC86570L from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Package / Case:8-PowerWDFN, Number of Channels:1, Number of Terminations:5, Number of Pins:8, Mounting Type:Surface Mount, FDMC86570L pinout, FDMC86570L datasheet PDF, FDMC86570L amp .Beyond Transistors - FETs, MOSFETs - Single onsemi FDMC86570L ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi FDMC86570L


N-Channel Tape & Reel (TR) 4.3m Ω @ 18A, 10V ±20V 6705pF @ 30V 88nC @ 10V 8-PowerWDFN

FDMC86570L Description


FDMC86570L is an N-channel Power MOSFET transistor from the manufacturer ON Semiconductor with a Drain to Source Breakdown Voltage of 60V. Shielded Gate technology combined with a cutting-edge PowerTrench? technique is used to create this N-Channel MOSFET. This procedure maintains excellent switching performance while being tuned for the on-state resistance.



FDMC86570L Features


  • Shielded Gate MOSFET Technology

  • Max rDS(on) = 4.3 m|? at VGS = 10 V, ID = 18 A

  • Max rDS(on) = 6.5 m|? at VGS = 4.5 V, ID = 15 A

  • High performance technology for extremely low rDS(on)

  • Termination is Lead-free

  • RoHS Compliant



FDMC86570L Applications


  • Power Management

  • Consumer Electronics

  • Portable Devices

  • Industrial


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