FDMC86570L
- Mfr.Part #
- FDMC86570L
- Manufacturer
- onsemi
- Package / Case
- 8-PowerWDFN
- Datasheet
- Download
- Description
- MOSFET N-CH 60V 18A/56A POWER33
- Stock
- 17,601
- In Stock :
- 17,601
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Operating Temperature :
- -55°C~150°C TJ
- JEDEC-95 Code :
- MO-240BA
- Power Dissipation-Max :
- 2.3W Ta 54W Tc
- Input Capacitance (Ciss) (Max) @ Vds :
- 6705pF @ 30V
- Series :
- PowerTrench®
- Avalanche Energy Rating (Eas) :
- 253 mJ
- Packaging :
- Tape and Reel (TR)
- Package / Case :
- 8-PowerWDFN
- Fall Time (Typ) :
- 10 ns
- FET Type :
- N-Channel
- Terminal Position :
- Dual
- Threshold Voltage :
- 1.8V
- JESD-30 Code :
- S-PDSO-N5
- Lifecycle Status :
- ACTIVE (Last Updated: 1 week ago)
- RoHS Status :
- ROHS3 Compliant
- Vgs (Max) :
- ±20V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- ECCN Code :
- EAR99
- Number of Channels :
- 1
- Max Junction Temperature (Tj) :
- 150°C
- Pulsed Drain Current-Max (IDM) :
- 200A
- Number of Terminations :
- 5
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Terminal Finish :
- Tin (Sn)
- Number of Pins :
- 8
- Rds On (Max) @ Id, Vgs :
- 4.3m Ω @ 18A, 10V
- Length :
- 3.4mm
- Drain to Source Breakdown Voltage :
- 60V
- Number of Elements :
- 1
- Rise Time :
- 12ns
- Turn-Off Delay Time :
- 38 ns
- Turn On Delay Time :
- 19 ns
- Gate to Source Voltage (Vgs) :
- 20V
- Gate Charge (Qg) (Max) @ Vgs :
- 88nC @ 10V
- Mount :
- Surface Mount
- Drain-source On Resistance-Max :
- 0.0043Ohm
- Radiation Hardening :
- No
- Transistor Application :
- SWITCHING
- JESD-609 Code :
- e3
- Current - Continuous Drain (Id) @ 25°C :
- 18A Ta 56A Tc
- Drain Current-Max (Abs) (ID) :
- 56A
- Mounting Type :
- Surface Mount
- Width :
- 3.4mm
- Case Connection :
- DRAIN
- Element Configuration :
- Single
- Transistor Element Material :
- SILICON
- Height :
- 800μm
- Pbfree Code :
- yes
- Weight :
- 152.7mg
- Operating Mode :
- ENHANCEMENT MODE
- Continuous Drain Current (ID) :
- 18A
- Power Dissipation :
- 2.3W
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- Factory Lead Time :
- 20 Weeks
- Datasheets
- FDMC86570L

N-Channel Tape & Reel (TR) 4.3m Ω @ 18A, 10V ±20V 6705pF @ 30V 88nC @ 10V 8-PowerWDFN
FDMC86570L Description
FDMC86570L is an N-channel Power MOSFET transistor from the manufacturer ON Semiconductor with a Drain to Source Breakdown Voltage of 60V. Shielded Gate technology combined with a cutting-edge PowerTrench? technique is used to create this N-Channel MOSFET. This procedure maintains excellent switching performance while being tuned for the on-state resistance.
FDMC86570L Features
-
Shielded Gate MOSFET Technology
-
Max rDS(on) = 4.3 m|? at VGS = 10 V, ID = 18 A
-
Max rDS(on) = 6.5 m|? at VGS = 4.5 V, ID = 15 A
-
High performance technology for extremely low rDS(on)
-
Termination is Lead-free
-
RoHS Compliant
FDMC86570L Applications
-
Power Management
-
Consumer Electronics
-
Portable Devices
-
Industrial
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