FDMC86520L
- Mfr.Part #
- FDMC86520L
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- 8-PowerWDFN
- Datasheet
- Download
- Description
- POWER FIELD-EFFECT TRANSISTOR, 1
- Stock
- 11,278
- In Stock :
- 11,278
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Transistor Element Material :
- SILICON
- Length :
- 3.3mm
- Rise Time :
- 5.2ns
- Avalanche Energy Rating (Eas) :
- 79 mJ
- FET Type :
- N-Channel
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- ECCN Code :
- EAR99
- Rds On (Max) @ Id, Vgs :
- 7.9m Ω @ 13.5A, 10V
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- Operating Mode :
- ENHANCEMENT MODE
- Fall Time (Typ) :
- 3.4 ns
- Current - Continuous Drain (Id) @ 25°C :
- 13.5A Ta 22A Tc
- Gate to Source Voltage (Vgs) :
- 20V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- JEDEC-95 Code :
- MO-229
- Width :
- 3.3mm
- Mounting Type :
- Surface Mount
- JESD-609 Code :
- e4
- Case Connection :
- DRAIN
- Input Capacitance (Ciss) (Max) @ Vds :
- 4550pF @ 30V
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Drain to Source Breakdown Voltage :
- 60V
- Continuous Drain Current (ID) :
- 13.5A
- Published :
- 2017
- RoHS Status :
- ROHS3 Compliant
- Terminal Position :
- Dual
- Gate Charge (Qg) (Max) @ Vgs :
- 64nC @ 10V
- Turn On Delay Time :
- 15 ns
- Number of Pins :
- 8
- Drain Current-Max (Abs) (ID) :
- 22A
- Packaging :
- Cut Tape (CT)
- JESD-30 Code :
- S-PDSO-N5
- Drain-source On Resistance-Max :
- 0.0079Ohm
- Turn-Off Delay Time :
- 32 ns
- Package / Case :
- 8-PowerWDFN
- Lead Free :
- Lead Free
- Factory Lead Time :
- 14 Weeks
- Number of Terminations :
- 5
- Power Dissipation-Max :
- 2.3W Ta 40W Tc
- Terminal Finish :
- Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag)
- Number of Elements :
- 1
- Mount :
- Surface Mount
- Operating Temperature :
- -55°C~150°C TJ
- Transistor Application :
- SWITCHING
- Element Configuration :
- Single
- Pbfree Code :
- yes
- Vgs (Max) :
- ±20V
- Weight :
- 165.33333mg
- Radiation Hardening :
- No
- Series :
- PowerTrench®
- Pulsed Drain Current-Max (IDM) :
- 60A
- Power Dissipation :
- 2.3W
- Height :
- 750μm
- Datasheets
- FDMC86520L
FDMC86520L Documents

N-Channel Cut Tape (CT) 7.9m Ω @ 13.5A, 10V ±20V 4550pF @ 30V 64nC @ 10V 8-PowerWDFN
FDMC7696 Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(on), fast switching speed, and body diode reverse recovery performance.
FDMC86520L Features
Max rDS(on) = 7.9 mΩ at VGS = 10 V, ID = 13.5 A
Max rDS(on) = 11.7 mΩ at VGS = 4.5 V, ID = 11.5 A
Low Profile - 1 mm max in Power 33
100% UIL Tested
RoHS Compliant
FDMC86520L Applications
Primary Switch in isolated DC-DC
Synchronous Rectifier
Load Switch
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