FDMC86520L
- Mfr.Part #
- FDMC86520L
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- 8-PowerWDFN
- Datasheet
- Download
- Description
- POWER FIELD-EFFECT TRANSISTOR, 1
- Stock
- 11,278
- In Stock :
- 11,278
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Continuous Drain Current (ID) :
- 13.5A
- Power Dissipation-Max :
- 2.3W Ta 40W Tc
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Elements :
- 1
- JEDEC-95 Code :
- MO-229
- Mount :
- Surface Mount
- Rds On (Max) @ Id, Vgs :
- 7.9m Ω @ 13.5A, 10V
- Vgs (Max) :
- ±20V
- ECCN Code :
- EAR99
- Weight :
- 165.33333mg
- Fall Time (Typ) :
- 3.4 ns
- Transistor Application :
- SWITCHING
- Current - Continuous Drain (Id) @ 25°C :
- 13.5A Ta 22A Tc
- Operating Mode :
- ENHANCEMENT MODE
- Number of Terminations :
- 5
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- Terminal Finish :
- Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag)
- Operating Temperature :
- -55°C~150°C TJ
- Input Capacitance (Ciss) (Max) @ Vds :
- 4550pF @ 30V
- Gate to Source Voltage (Vgs) :
- 20V
- JESD-609 Code :
- e4
- Power Dissipation :
- 2.3W
- Pulsed Drain Current-Max (IDM) :
- 60A
- Series :
- PowerTrench®
- Mounting Type :
- Surface Mount
- Package / Case :
- 8-PowerWDFN
- Drain-source On Resistance-Max :
- 0.0079Ohm
- Avalanche Energy Rating (Eas) :
- 79 mJ
- Case Connection :
- DRAIN
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Rise Time :
- 5.2ns
- Turn-Off Delay Time :
- 32 ns
- RoHS Status :
- ROHS3 Compliant
- Height :
- 750μm
- Length :
- 3.3mm
- FET Type :
- N-Channel
- Pbfree Code :
- yes
- JESD-30 Code :
- S-PDSO-N5
- Number of Pins :
- 8
- Drain Current-Max (Abs) (ID) :
- 22A
- Width :
- 3.3mm
- Gate Charge (Qg) (Max) @ Vgs :
- 64nC @ 10V
- Packaging :
- Cut Tape (CT)
- Element Configuration :
- Single
- Drain to Source Breakdown Voltage :
- 60V
- Factory Lead Time :
- 14 Weeks
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Radiation Hardening :
- No
- Transistor Element Material :
- SILICON
- Terminal Position :
- Dual
- Turn On Delay Time :
- 15 ns
- Lead Free :
- Lead Free
- Published :
- 2017
- Datasheets
- FDMC86520L

N-Channel Cut Tape (CT) 7.9m Ω @ 13.5A, 10V ±20V 4550pF @ 30V 64nC @ 10V 8-PowerWDFN
FDMC7696 Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(on), fast switching speed, and body diode reverse recovery performance.
FDMC86520L Features
Max rDS(on) = 7.9 mΩ at VGS = 10 V, ID = 13.5 A
Max rDS(on) = 11.7 mΩ at VGS = 4.5 V, ID = 11.5 A
Low Profile - 1 mm max in Power 33
100% UIL Tested
RoHS Compliant
FDMC86520L Applications
Primary Switch in isolated DC-DC
Synchronous Rectifier
Load Switch
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