FDMC86520L
- Mfr.Part #
- FDMC86520L
- Manufacturer
- onsemi
- Package / Case
- 8-PowerWDFN
- Datasheet
- Download
- Description
- MOSFET N-CH 60V 13.5A/22A 8MLP
- Stock
- 31,986
- In Stock :
- 31,986
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Mount :
- Surface Mount
- Fall Time (Typ) :
- 3.4 ns
- Operating Mode :
- ENHANCEMENT MODE
- Width :
- 3.3mm
- Height :
- 750μm
- Length :
- 3.3mm
- RoHS Status :
- ROHS3 Compliant
- Vgs (Max) :
- ±20V
- Pulsed Drain Current-Max (IDM) :
- 60A
- Element Configuration :
- Single
- Package / Case :
- 8-PowerWDFN
- Gate Charge (Qg) (Max) @ Vgs :
- 64nC @ 10V
- Current - Continuous Drain (Id) @ 25°C :
- 13.5A Ta 22A Tc
- Terminal Position :
- Dual
- Rds On (Max) @ Id, Vgs :
- 7.9m Ω @ 13.5A, 10V
- Lead Free :
- Lead Free
- Terminal Finish :
- Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag)
- Pbfree Code :
- yes
- Drain Current-Max (Abs) (ID) :
- 22A
- Radiation Hardening :
- No
- FET Type :
- N-Channel
- Operating Temperature :
- -55°C~150°C TJ
- JESD-30 Code :
- S-PDSO-N5
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Series :
- PowerTrench®
- Continuous Drain Current (ID) :
- 13.5A
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Turn On Delay Time :
- 15 ns
- Published :
- 2017
- Weight :
- 165.33333mg
- JESD-609 Code :
- e4
- Number of Pins :
- 8
- Drain-source On Resistance-Max :
- 0.0079Ohm
- Transistor Element Material :
- SILICON
- Gate to Source Voltage (Vgs) :
- 20V
- Factory Lead Time :
- 14 Weeks
- Power Dissipation :
- 2.3W
- Avalanche Energy Rating (Eas) :
- 79 mJ
- ECCN Code :
- EAR99
- Turn-Off Delay Time :
- 32 ns
- Number of Terminations :
- 5
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- Transistor Application :
- SWITCHING
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Rise Time :
- 5.2ns
- Drain to Source Breakdown Voltage :
- 60V
- Mounting Type :
- Surface Mount
- Case Connection :
- DRAIN
- Number of Elements :
- 1
- JEDEC-95 Code :
- MO-229
- Packaging :
- Cut Tape (CT)
- Input Capacitance (Ciss) (Max) @ Vds :
- 4550pF @ 30V
- Power Dissipation-Max :
- 2.3W Ta 40W Tc
- Datasheets
- FDMC86520L

N-Channel Cut Tape (CT) 7.9m Ω @ 13.5A, 10V ±20V 4550pF @ 30V 64nC @ 10V 8-PowerWDFN
FDMC7696 Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(on), fast switching speed, and body diode reverse recovery performance.
FDMC86520L Features
Max rDS(on) = 7.9 mΩ at VGS = 10 V, ID = 13.5 A
Max rDS(on) = 11.7 mΩ at VGS = 4.5 V, ID = 11.5 A
Low Profile - 1 mm max in Power 33
100% UIL Tested
RoHS Compliant
FDMC86520L Applications
Primary Switch in isolated DC-DC
Synchronous Rectifier
Load Switch
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