FDMC86520L

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs(th) (Max) @ Id :

3V @ 250µA

JESD-609 Code :

e4

Rds On (Max) @ Id, Vgs :

7.9m Ω @ 13.5A, 10V

Terminal Finish :

Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag)

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Fall Time (Typ) :

3.4 ns

JEDEC-95 Code :

MO-229

Continuous Drain Current (ID) :

13.5A

Avalanche Energy Rating (Eas) :

79 mJ

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Package / Case :

8-PowerWDFN

Number of Pins :

8

Gate to Source Voltage (Vgs) :

20V

Published :

2017

Number of Elements :

1

Gate Charge (Qg) (Max) @ Vgs :

64nC @ 10V

Height :

750μm

Drain-source On Resistance-Max :

0.0079Ohm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rise Time :

5.2ns

Terminal Position :

Dual

Series :

PowerTrench®

Mount :

Surface Mount

RoHS Status :

ROHS3 Compliant

Weight :

165.33333mg

Transistor Application :

SWITCHING

Turn-Off Delay Time :

32 ns

Width :

3.3mm

Transistor Element Material :

SILICON

Operating Temperature :

-55°C~150°C TJ

Number of Terminations :

5

Element Configuration :

Single

Drain Current-Max (Abs) (ID) :

22A

Drain to Source Breakdown Voltage :

60V

Power Dissipation :

2.3W

Operating Mode :

ENHANCEMENT MODE

FET Type :

N-Channel

ECCN Code :

EAR99

Lead Free :

Lead Free

Pbfree Code :

yes

Turn On Delay Time :

15 ns

Pulsed Drain Current-Max (IDM) :

60A

Factory Lead Time :

14 Weeks

Current - Continuous Drain (Id) @ 25°C :

13.5A Ta 22A Tc

Case Connection :

DRAIN

Mounting Type :

Surface Mount

JESD-30 Code :

S-PDSO-N5

Packaging :

Cut Tape (CT)

Input Capacitance (Ciss) (Max) @ Vds :

4550pF @ 30V

Vgs (Max) :

±20V

Length :

3.3mm

Power Dissipation-Max :

2.3W Ta 40W Tc

Radiation Hardening :

No