FDMC86340ET80

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Mfr.Part #
FDMC86340ET80
Manufacturer
onsemi
Package / Case
8-PowerWDFN
Datasheet
Download
Description
MOSFET N-CH 80V 14A/68A POWER33
Stock
30,340
In Stock :
30,340

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Input Capacitance (Ciss) (Max) @ Vds :
2775pF @ 40V
Power Dissipation-Max :
2.8W Ta 65W Tc
Number of Channels :
1
Current - Continuous Drain (Id) @ 25°C :
14A Ta 68A Tc
Terminal Finish :
Tin (Sn)
Vgs (Max) :
±20V
Fall Time (Typ) :
5.1 ns
Lifecycle Status :
ACTIVE (Last Updated: 1 week ago)
RoHS Status :
ROHS3 Compliant
Package / Case :
8-PowerWDFN
Rise Time :
7.9ns
Packaging :
Tape and Reel (TR)
Pbfree Code :
yes
Rds On (Max) @ Id, Vgs :
6.5m Ω @ 14A, 10V
Gate Charge (Qg) (Max) @ Vgs :
49nC @ 10V
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
JESD-609 Code :
e3
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Mounting Type :
Surface Mount
Drain to Source Breakdown Voltage :
80V
Element Configuration :
Single
Series :
PowerTrench®
Mount :
Surface Mount
Turn-Off Delay Time :
23 ns
Vgs(th) (Max) @ Id :
4V @ 250µA
Weight :
152.7mg
Gate to Source Voltage (Vgs) :
20V
Peak Reflow Temperature (Cel) :
260
Lead Free :
Lead Free
ECCN Code :
EAR99
Drive Voltage (Max Rds On,Min Rds On) :
8V 10V
Turn On Delay Time :
20 ns
Factory Lead Time :
10 Weeks
Number of Pins :
8
Reach Compliance Code :
not_compliant
Continuous Drain Current (ID) :
68A
Operating Temperature :
-55°C~175°C TJ
FET Type :
N-Channel
Datasheets
FDMC86340ET80
Introducing Transistors - FETs, MOSFETs - Single onsemi FDMC86340ET80 from Chip IC,where excellence meets affordability. This product stands out with its Number of Channels:1, Package / Case:8-PowerWDFN, Mounting Type:Surface Mount, Number of Pins:8, Operating Temperature:-55°C~175°C TJ, FDMC86340ET80 pinout, FDMC86340ET80 datasheet PDF, FDMC86340ET80 amp .Beyond Transistors - FETs, MOSFETs - Single onsemi FDMC86340ET80 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi FDMC86340ET80


N-Channel Tape & Reel (TR) 6.5m Ω @ 14A, 10V ±20V 2775pF @ 40V 49nC @ 10V 8-PowerWDFN

FDMC86340ET80 Overview


CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 2775pF @ 40V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 80V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 80V.As a result of its turn-off delay time, which is 23 ns, the device has taken time to charge its input capacitance before drain current conduction begins.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 20 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.In addition to reducing power consumption, this device uses drive voltage (8V 10V).

FDMC86340ET80 Features


a continuous drain current (ID) of 68A
a drain-to-source breakdown voltage of 80V voltage
the turn-off delay time is 23 ns


FDMC86340ET80 Applications


There are a lot of ON Semiconductor
FDMC86340ET80 applications of single MOSFETs transistors.


  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
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