FDMC86340
- Mfr.Part #
- FDMC86340
- Manufacturer
- onsemi
- Package / Case
- 8-PowerWDFN
- Datasheet
- Download
- Description
- MOSFET N-CH 80V 14A/48A POWER33
- Stock
- 16,133
- In Stock :
- 16,133
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Turn-Off Delay Time :
- 23 ns
- Vgs (Max) :
- ±20V
- Mount :
- Surface Mount
- Drain to Source Breakdown Voltage :
- 80V
- RoHS Status :
- ROHS3 Compliant
- Gate to Source Voltage (Vgs) :
- 20V
- Case Connection :
- DRAIN
- Transistor Application :
- SWITCHING
- Published :
- 2017
- Operating Mode :
- ENHANCEMENT MODE
- Rise Time :
- 16ns
- Length :
- 3.4mm
- Turn On Delay Time :
- 20 ns
- JEDEC-95 Code :
- MO-240BA
- Pbfree Code :
- yes
- Package / Case :
- 8-PowerWDFN
- ECCN Code :
- EAR99
- Height :
- 750μm
- Terminal Finish :
- Tin (Sn)
- Pulsed Drain Current-Max (IDM) :
- 200A
- Mounting Type :
- Surface Mount
- JESD-30 Code :
- S-PDSO-N5
- Element Configuration :
- Single
- Rds On (Max) @ Id, Vgs :
- 6.5m Ω @ 14A, 10V
- Current - Continuous Drain (Id) @ 25°C :
- 14A Ta 48A Tc
- Drain-source On Resistance-Max :
- 0.0065ohm
- Fall Time (Typ) :
- 10 ns
- FET Type :
- N-Channel
- Weight :
- 152.7mg
- Radiation Hardening :
- No
- Packaging :
- Tape and Reel (TR)
- Gate Charge (Qg) (Max) @ Vgs :
- 53nC @ 10V
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Factory Lead Time :
- 12 Weeks
- Terminal Position :
- Dual
- Width :
- 3.4mm
- Power Dissipation :
- 54W
- Drive Voltage (Max Rds On,Min Rds On) :
- 8V 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 3885pF @ 40V
- Operating Temperature :
- -55°C~150°C TJ
- Transistor Element Material :
- SILICON
- Number of Elements :
- 1
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Pins :
- 8
- Number of Terminations :
- 5
- Continuous Drain Current (ID) :
- 48A
- Power Dissipation-Max :
- 2.3W Ta 54W Tc
- Series :
- PowerTrench®
- JESD-609 Code :
- e3
- Lifecycle Status :
- ACTIVE (Last Updated: 23 hours ago)
- Datasheets
- FDMC86340

N-Channel Tape & Reel (TR) 6.5m Ω @ 14A, 10V ±20V 3885pF @ 40V 53nC @ 10V 8-PowerWDFN
FDMC86340 Description
FDMC86340 is an N-channel MOSFET manufactured by onsemi. The N-Channel MOSFET FDMC86340 is produced using an advanced Power Trench? process that incorporates Shielded Gate technology. This process has been optimized for the on-state resistance yet maintains superior switching performance. The FDMC86340 is offered in the Power-33-8package. It is specified for operation from –55°C to +150°C.
FDMC86340 Features
-
Shielded Gate MOSFET Technology
-
Max rDS(on) = 6.5 mΩ at VGS = 10 V, ID = 14 A
-
Max rDS(on) = 8.5 mΩ at VGS = 8 V, ID = 12 A
-
High-performance technology for extremely low RDS(on)
-
Termination is Lead-free
-
RoHS Compliant
FDMC86340 Applications
-
cellular phones and laptop computers
-
LED power sources
-
photovoltaic systems
-
wind turbines
-
vacuum tube
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