FDMC86340

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Fall Time (Typ) :

10 ns

Turn-Off Delay Time :

23 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Position :

Dual

Number of Elements :

1

Gate to Source Voltage (Vgs) :

20V

Operating Mode :

ENHANCEMENT MODE

Vgs (Max) :

±20V

ECCN Code :

EAR99

Transistor Element Material :

SILICON

Vgs(th) (Max) @ Id :

4V @ 250µA

Current - Continuous Drain (Id) @ 25°C :

14A Ta 48A Tc

Power Dissipation-Max :

2.3W Ta 54W Tc

Pbfree Code :

yes

Transistor Application :

SWITCHING

Packaging :

Tape and Reel (TR)

Input Capacitance (Ciss) (Max) @ Vds :

3885pF @ 40V

JEDEC-95 Code :

MO-240BA

Pulsed Drain Current-Max (IDM) :

200A

Width :

3.4mm

FET Type :

N-Channel

Power Dissipation :

54W

Continuous Drain Current (ID) :

48A

Case Connection :

DRAIN

Drive Voltage (Max Rds On,Min Rds On) :

8V 10V

JESD-30 Code :

S-PDSO-N5

Rise Time :

16ns

Mount :

Surface Mount

Factory Lead Time :

12 Weeks

Element Configuration :

Single

RoHS Status :

ROHS3 Compliant

Radiation Hardening :

No

Turn On Delay Time :

20 ns

Gate Charge (Qg) (Max) @ Vgs :

53nC @ 10V

Terminal Finish :

Tin (Sn)

Drain-source On Resistance-Max :

0.0065ohm

Weight :

152.7mg

Lifecycle Status :

ACTIVE (Last Updated: 23 hours ago)

Number of Pins :

8

Length :

3.4mm

Height :

750μm

Series :

PowerTrench®

Package / Case :

8-PowerWDFN

Operating Temperature :

-55°C~150°C TJ

Mounting Type :

Surface Mount

Published :

2017

Rds On (Max) @ Id, Vgs :

6.5m Ω @ 14A, 10V

Drain to Source Breakdown Voltage :

80V

JESD-609 Code :

e3

Number of Terminations :

5