FDMC86324

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Mounting Type :

Surface Mount

JESD-609 Code :

e4

Operating Mode :

ENHANCEMENT MODE

JESD-30 Code :

S-PDSO-N5

Rise Time :

4ns

Input Capacitance (Ciss) (Max) @ Vds :

965pF @ 50V

Avalanche Energy Rating (Eas) :

72 mJ

Length :

3.3mm

Turn-Off Delay Time :

14 ns

Drain to Source Breakdown Voltage :

80V

Turn On Delay Time :

8 ns

Height :

1.05mm

Operating Temperature :

-55°C~150°C TJ

Number of Terminations :

5

Element Configuration :

Single

Terminal Position :

Dual

Gate Charge (Qg) (Max) @ Vgs :

18nC @ 10V

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Fall Time (Typ) :

4 ns

Power Dissipation-Max :

2.3W Ta 41W Tc

Published :

2008

Package / Case :

8-PowerTDFN

Current - Continuous Drain (Id) @ 25°C :

7A Ta 20A Tc

Factory Lead Time :

5 Weeks

Power Dissipation :

41W

Transistor Application :

SWITCHING

Threshold Voltage :

3.1V

Drain-source On Resistance-Max :

0.023Ohm

REACH SVHC :

No SVHC

Number of Elements :

1

Rds On (Max) @ Id, Vgs :

23m Ω @ 7A, 10V

Continuous Drain Current (ID) :

7A

Case Connection :

DRAIN

Pbfree Code :

yes

Vgs (Max) :

±20V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Lifecycle Status :

ACTIVE (Last Updated: 22 hours ago)

RoHS Status :

ROHS3 Compliant

Transistor Element Material :

SILICON

FET Type :

N-Channel

Vgs(th) (Max) @ Id :

4V @ 250µA

JEDEC-95 Code :

MO-240BA

Width :

3.3mm

Weight :

32.13mg

Packaging :

Tape and Reel (TR)

ECCN Code :

EAR99

Number of Pins :

8

Series :

PowerTrench®

Gate to Source Voltage (Vgs) :

20V

Drain Current-Max (Abs) (ID) :

7A

Radiation Hardening :

No

Pulsed Drain Current-Max (IDM) :

30A

Mount :

Surface Mount

Terminal Finish :

Nickel/Palladium (Ni/Pd)